ATTINY13-20MU Atmel, ATTINY13-20MU Datasheet - Page 17

IC MCU AVR 1K FLASH 10MHZ 20-MLF

ATTINY13-20MU

Manufacturer Part Number
ATTINY13-20MU
Description
IC MCU AVR 1K FLASH 10MHZ 20-MLF
Manufacturer
Atmel
Series
AVR® ATtinyr
Datasheets

Specifications of ATTINY13-20MU

Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
6
Program Memory Size
1KB (512 x 16)
Program Memory Type
FLASH
Eeprom Size
64 x 8
Ram Size
64 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 4x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-MLF®, QFN
Processor Series
ATTINY1x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
64 B
Interface Type
SPI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
6
Number Of Timers
2
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT, ATAKSTK511
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 4 Channel
Package
20MLF EP
Device Core
AVR
Family Name
ATtiny
Maximum Speed
20 MHz
For Use With
ATSTK600-DIP40 - STK600 SOCKET/ADAPTER 40-PDIP770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRDRAGON - KIT DRAGON 32KB FLASH MEM AVRATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Connectivity
-
Lead Free Status / Rohs Status
 Details
8. Errata
8.1
8.2
8.3
8.3.1
8.3.2
8.3.3
2535JS–AVR–08/10
ATtiny13 Rev. D
ATtiny13 Rev. C
ATtiny13 Rev. B
Wrong values read after Erase Only operation
High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
Device may lock for further programming
The revision letter in this section refers to the revision of the ATtiny13 device.
1. EEPROM can not be written below 1.9 Volt
Revision C has not been sampled.
EEPROM can not be written below 1.9 Volt
Wrong values read after Erase Only operation
High Voltage Serial Programming Flash, EEPROM, Fuse and Lock Bits may fail
Device may lock for further programming
debugWIRE communication not blocked by lock-bits
Watchdog Timer Interrupt disabled
EEPROM can not be written below 1.9 Volt
Writing the EEPROM at V
Problem Fix/Workaround
Do not write the EEPROM when V
At supply voltages below 2.7 V, an EEPROM location that is erased by the Erase Only oper-
ation may read as programmed (0x00).
Problem Fix/Workaround
If it is necessary to read an EEPROM location after Erase Only, use an Atomic Write opera-
tion with 0xFF as data in order to erase a location. In any case, the Write Only operation can
be used as intended. Thus no special considerations are needed as long as the erased loca-
tion is not read before it is programmed.
Writing to any of these locations and bits may in some occasions fail.
Problem Fix/Workaround
After a writing has been initiated, always observe the RDY/BSY signal. If the writing should
fail, rewrite until the RDY/BSY verifies a correct writing. This will be fixed in revision D.
Special combinations of fuse bits will lock the device for further programming effectively
turning it into an OTP device. The following combinations of settings/fuse bits will cause this
effect:
– 128 kHz internal oscillator (CKSEL[1..0] = 11), shortest start-up time
– 9.6 MHz internal oscillator (CKSEL[1..0] = 10), shortest start-up time
(SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
(SUT[1..0] = 00), Debugwire enabled (DWEN = 0) or Reset disabled RSTDISBL = 0.
CC
below 1.9 volts might fail.
CC
is below 1.9 volts.
17

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