MPTE-5RL4G ON Semiconductor, MPTE-5RL4G Datasheet - Page 2

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MPTE-5RL4G

Manufacturer Part Number
MPTE-5RL4G
Description
DIODE TVS 1500W 5V UNI DO-201AD
Manufacturer
ON Semiconductor
Series
Mosorb™r
Datasheet

Specifications of MPTE-5RL4G

Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
6V
Power (watts)
1500W
Polarization
Unidirectional
Mounting Type
Through Hole
Package / Case
Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above T
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Please see 1N6382 – 1N6389 (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) for Bidirectional Devices.
ELECTRICAL CHARACTERISTICS
otherwise noted, V
MAXIMUM RATINGS
Peak Power Dissipation (Note 1)
Steady State Power Dissipation @ T
Thermal Resistance, Junction−to−Lead
Forward Surge Current (Note 2)
Operating and Storage Temperature Range
Symbol
V
QV
@ T
Derated above T
@ T
V
I
RWM
V
V
PP
I
I
I
BR
R
T
F
C
F
BR
A
L
≤ 25°C
= 25°C
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Maximum Temperature Variation of V
Forward Current
Forward Voltage @ I
1N6373 − 1N6381 Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45)
F
L
= 3.5 V Max. @ I
= 75°C
Parameter
F
PP
T
F
L
Rating
≤ 75°C, Lead Length = 3/8″
(Note 3) = 100 A)
(T
A
= 25°C unless
BR
RWM
http://onsemi.com
A
= 25°C per Figure 2.
2
V
C
V
BR
Symbol
T
V
R
I
J
P
RWM
FSM
P
, T
Uni−Directional TVS
qJL
PK
D
stg
I
F
I
I
I
I
R
T
PP
− 65 to +175
V
F
Value
1500
200
5.0
20
20
V
mW/°C
°C/W
Unit
°C
W
W
A

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