MPTE-005G ON Semiconductor, MPTE-005G Datasheet

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MPTE-005G

Manufacturer Part Number
MPTE-005G
Description
DIODE TVS 1500W 5V UNI DO-201AD
Manufacturer
ON Semiconductor
Series
Mosorb™r
Datasheet

Specifications of MPTE-005G

Voltage - Reverse Standoff (typ)
5V
Voltage - Breakdown
6V
Power (watts)
1500W
Polarization
Unidirectional
Mounting Type
Through Hole
Package / Case
Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1N6373 − 1N6381 Series
(ICTE−5 − ICTE−36,
MPTE−5 − MPTE−45)
1500 Watt Peak Power
Mosorbt Zener Transient
Voltage Suppressors
Unidirectional*
components from high voltage, high−energy transients. They have
excellent clamping capability, high surge capability, low zener
i m p e d a n c e a n d f a s t r e s p o n s e t i m e . T h e s e d e v i c e s a r e
ON Semiconductor’s exclusive, cost-effective, highly reliable
Surmetict axial leaded package and are ideally-suited for use in
communication systems, numerical controls, process controls,
medical equipment, business machines, power supplies and many
other industrial/consumer applications, to protect CMOS, MOS and
Bipolar integrated circuits.
Specification Features
Mechanical Characteristics
CASE:
FINISH:
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY:
MOUNTING POSITION:
*For additional information on our Pb−Free strategy and soldering details, please
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
© Semiconductor Components Industries, LLC, 2005
December, 2005 − Rev. 4
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Specifications Brochure, BRD8011/D.
Mosorb devices are designed to protect voltage sensitive
Working Peak Reverse Voltage Range − 5.0 V to 45 V
Peak Power − 1500 Watts @ 1 ms
ESD Rating of Class 3 (>16 KV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5 mA Above 10 V
Response Time is Typically < 1 ns
Pb−Free Packages are Available*
Void-free, transfer-molded, thermosetting plastic
All external surfaces are corrosion resistant and leads are
Cathode indicated by polarity band
Any
1
MPTE−xx, G
MPTE−xxRL4, G
ICTE−xx, G
ICTE−xxRL4, G
1N63xx, G
1N63xxRL4, G
Device
Cathode
ORDERING INFORMATION
A
MPTE−xx = ON Device Code
1N63xx
ICTE−xx = ON Device Code
YY
WW
G
(Note: Microdot may be in either location)
http://onsemi.com
MARKING DIAGRAMS
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
Axial Lead
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
(Pb−Free)
Package
= Assembly Location
= JEDEC Device Code
= Year
= Work Week
= Pb−Free Package
AXIAL LEAD
CASE 41A
PLASTIC
Publication Order Number:
YYWWG
YYWWG
MPTE
ICTE
63xx
−xx
−xx
1N
A
A
G
G
1500/Tape & Reel
1500/Tape & Reel
1500/Tape & Reel
500 Units/Box
500 Units/Box
500 Units/Box
Anode
Shipping
1N6373/D

Related parts for MPTE-005G

MPTE-005G Summary of contents

Page 1

... Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2005 December, 2005 − Rev. 4 http://onsemi.com Cathode AXIAL LEAD CASE 41A MARKING DIAGRAMS A = Assembly Location MPTE− Device Code 1N63xx = JEDEC Device Code ICTE− Device Code YY = Year WW = Work Week G = Pb−Free Package ...

Page 2

... Nonrepetitive current pulse per Figure 5 and derated above T 2. 1/2 sine wave (or equivalent square wave 8.3 ms, duty cycle = 4 pulses per minute maximum. *Please see 1N6382 – 1N6389 (ICTE−10C − ICTE−36C, MPTE−8C − MPTE−45C) for Bidirectional Devices. ELECTRICAL CHARACTERISTICS otherwise noted ...

Page 3

... Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45) ELECTRICAL CHARACTERISTICS (T V RWM JEDEC (Note 4) † Device Device (ON Device) Marking (Volts) 1N6373, G 1N6373 (MPTE−5, G) MPTE−5 5.0 1N6374, G 1N6374 (MPTE−8, G) MPTE−8 8.0 1N6375, G 1N6375 (MPTE− ...

Page 4

... Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45) 100 100 PULSE WIDTH P Figure 1. Pulse Rating Curve 10,000 1000 MEASURED @ V 100 10 1 Figure 3. Capacitance versus Breakdown Voltage 100 125 150 T , LEAD TEMPERATURE (°C) L Figure 4. Steady State Power Derating ...

Page 5

... Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45) 1N6373, ICTE-5, MPTE-5, through 1N6389, ICTE-45, C, MPTE-45, C 1000 25°C BR(MIN) L 500 200 100 0.3 0.5 0 INSTANTANEOUS INCREASE IN V ABOVE 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 ...

Page 6

... Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45) RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method ...

Page 7

... Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45 http://onsemi.com MOSORB CASE 41A−04 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. LEAD FINISH AND DIAMETER UNCONTROLLED IN DIMENSION P. 4. 041A−01 THRU 041A−03 OBSOLETE, NEW STANDARD 041A− ...

Page 8

... Series (ICTE−5 − ICTE−36, MPTE−5 − MPTE−45) Mosorb and Surmetic are trademarks of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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