1SMB45CAT3G ON Semiconductor, 1SMB45CAT3G Datasheet - Page 2

• Manufacturer Part Number: 1SMB45CAT3G
• Description: TVS 600W 45V BIDIRECT SMB
• Manufacturer: ON Semiconductor

Specifications of 1SMB45CAT3G

• Voltage - Reverse Standoff (typ): 45V
• Voltage - Breakdown: 50V
• Power (watts): 600W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1″ square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec
*Please see 1SMB5.0AT3 to 1SMB170AT3 for Unidirectional devices
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
(T
Peak Power Dissipation (Note 1)
DC Power Dissipation @ T
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T
Thermal Resistance from Junction−to−Ambient
Operating and Storage
Symbol
A
V
@ T
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Derate Above 25°C
Temperature Range
V
= 25°C unless otherwise noted)
I
RWM
V
I
PP
I
BR
R
T
C
L
= 25°C, Pulse Width = 1 ms
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
L
= 75°C
Parameter
PP
A
T
= 25°C
Rating
RWM
http://onsemi.com
2
V
C
V
BR
Bi−Directional TVS
Symbol
T
V
R
R
J
P
RWM
P
P
, T
qJL
qJA
PK
D
D
stg
I
PP
I
I
R
T
I
I
I
I
PP
R
T
−65 to +150
V
RWM
Value
0.55
600
226
3.0
4.4
40
25
V
BR
V
C
V
mW/°C
mW/°C
°C/W
°C/W
Unit
°C
W
W
W