GSOT24C-HT3-GS08 Vishay, GSOT24C-HT3-GS08 Datasheet - Page 9

• Manufacturer Part Number: GSOT24C-HT3-GS08
• Description: DIODE ESD 2LINE 24V LLP75
• Manufacturer: Vishay

Specifications of GSOT24C-HT3-GS08

• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 27V
• Power (watts): 235W
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Package / Case: LLP75-3B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

BiSy-mode (1-line Bidirectional Symmetrical protection mode)
If a bipolar symmetrical protection device is needed the GSOTxxC-HT3 can also be used as a single line
protection device. Therefore pin 1 has to be connected to the signal- or data-line (L1) and pin 2 to ground
(or vice versa). pin 3 must not be connected.
Positive and negative voltage transients will be clamped in the same way. The clamping current through the
GSOTxxC-HS3 passes one diode in forward direction and the other one in reverse direction. The Clamping
Voltage (V
other diode plus the voltage drop at the series impedances (resistances and inductances) of the protection
device.
Due to the same clamping levels in positive and negative direction the GSOTxxC-HT3 voltage clamping
behaviour is Bidirectional and Symmetrical (BiSy).
Electrical Characteristics
Ratings at 25 °C, ambient temperature unless otherwise specified
GSOT03C-HT3
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
GSOT04C-HT3
BiSy mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Document Number 85825
Rev. 1.7, 21-Apr-08
Protection paths
Reverse stand off voltage
Reverse current
Reverse break down voltage
Clamping voltage
Capacitance
Protection paths
Reverse stand off voltage
Reverse current
Reverse break down voltage
Clamping voltage
Capacitance
Parameter
Parameter
L1
C
) is defined by the BReakthrough Voltage (V
Number of lines which can be protected
Number of lines which can be protected
For technical support, please contact: [e-mail]
at V
Test conditions/remarks
Test conditions/remarks
at V
at V
at V
at I
at I
R
at I
R
R
R
PP
PP
at V
at I
at V
at I
at I
= 1.6 V; f = 1 MHz
at I
at I
= 0 V; f = 1 MHz
= 0 V; f = 1 MHz
= 2 V; f = 1 MHz
R
= I
= I
1
2
R
R
R
R
PP
R
PP
= 100 µA
GSOT03C-HT3 to GSOT36C-HT3
= 20 µA
PPM
PPM
= 1 mA
= 1 mA
= 3.8 V
= 4.5 V
= 1 A
= 1 A
= 30 A
= 30 A
3
BR
) level of one diode plus the forward voltage of the
Symbol
Symbol
V
V
N
N
V
V
RWM
V
V
C
C
RWM
V
V
C
C
lines
lines
I
I
BR
BR
R
R
C
C
D
D
C
C
D
D
Min.
Min.
3.8
4.5
4.5
5.5
Vishay Semiconductors
15.7
Typ.
Typ.
210
190
155
135
5.3
6.8
7.5
14
7
Max.
Max.
16.8
18.8
100
300
225
8.4
20
1
1
9
20241
www.vishay.com
lines
lines
Unit
Unit
µA
pF
pF
µA
pF
pF
V
V
V
V
V
V
V
V
9