1SMB16CAT3G ON Semiconductor, 1SMB16CAT3G Datasheet - Page 3

TVS 600W 16V BIDIRECT SMB

1SMB16CAT3G

Manufacturer Part Number
1SMB16CAT3G
Description
TVS 600W 16V BIDIRECT SMB
Manufacturer
ON Semiconductor
Datasheet

Specifications of 1SMB16CAT3G

Voltage - Reverse Standoff (typ)
16V
Voltage - Breakdown
17.8V
Power (watts)
600W
Polarization
Bidirectional
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Polarity
Bidirectional
Clamping Voltage
26 V
Operating Voltage
16 V
Breakdown Voltage
18.74 V
Termination Style
SMD/SMT
Peak Surge Current
23.1 A
Peak Pulse Power Dissipation
600 W
Capacitance
520 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
3.81(Max) mm W x 4.57(Max) mm L
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
1SMB16CAT3GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
1SMB16CAT3G
Manufacturer:
ALTERA
Quantity:
101
Part Number:
1SMB16CAT3G
Manufacturer:
ON
Quantity:
500
Part Number:
1SMB16CAT3G
Manufacturer:
ON/安森美
Quantity:
20 000
4. A transient suppressor is normally selected according to the working peak reverse voltage (V
5. V
6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data − 600 Watt at the beginning of this group.
7. Bias Voltage = 0 V, F = 1 MHz, T
*The “G” suffix indicates Pb−Free package available.
ELECTRICAL CHARACTERISTICS
1SMB10CAT3, G
1SMB11CAT3, G
1SMB12CAT3, G
1SMB13CAT3, G
1SMB14CAT3, G
1SMB15CAT3, G
1SMB16CAT3, G
1SMB17CAT3, G
1SMB18CAT3, G
1SMB20CAT3, G
1SMB22CAT3, G
1SMB24CAT3, G
1SMB26CAT3, G
1SMB28CAT3, G
1SMB30CAT3, G
1SMB33CAT3, G
1SMB36CAT3, G
1SMB40CAT3, G
1SMB43CAT3, G
1SMB45CAT3, G
1SMB48CAT3, G
1SMB51CAT3, G
1SMB54CAT3, G
1SMB58CAT3, G
1SMB60CAT3, G
1SMB64CAT3, G
1SMB75CAT3, G
the DC or continuous peak operating voltage level.
BR
Device*
measured at pulse test current I
Marking
Device
MGC
MMC
LMC
MEC
MKC
MPC
MRC
MTC
MVC
MXC
MZC
NGC
NMC
NRC
KXC
LGC
NEC
NKC
KZC
LEC
LKC
LPC
LRC
LXC
LZC
LTC
LVC
J
= 25°C
(Note 4)
T
V
Volts
at an ambient temperature of 25°C.
RWM
(Devices listed in bold, italic are ON Semiconductor Preferred devices.)
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
54
58
60
64
75
I
R
@ V
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
mA
http://onsemi.com
RWM
3
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
60.0
64.4
66.7
71.1
83.3
11.1
Min
V
BR
Breakdown Voltage
(Note 5) Volts
11.69
12.84
14.00
15.16
16.42
17.58
18.74
19.90
21.06
23.37
25.69
28.11
30.42
32.74
35.06
38.63
42.11
46.74
50.32
52.63
56.11
59.69
63.16
67.79
70.21
74.84
91.65
Nom
12.27
66.32
71.18
73.72
78.58
92.07
Max
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
27.0
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
55.3
58.9
62.7
RWM
), which should be equal to or greater than
@ I
mA
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
T
V
Volts
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.2
77.4
82.4
87.1
93.6
96.8
C
103
121
V
@ I
C
PP
(Note 6)
Amps
35.3
33.0
30.2
27.9
25.8
24.0
23.1
21.7
20.5
18.5
16.9
15.4
14.2
13.2
12.4
10.3
11.3
I
9.3
8.6
8.3
7.7
7.3
6.9
6.4
6.2
5.8
4.9
PP
(Note 7)
C
805
740
680
630
590
555
520
490
465
425
390
366
330
310
290
265
245
220
210
200
190
175
170
155
150
145
125
pF
typ

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