NUP1105LT1G ON Semiconductor, NUP1105LT1G Datasheet - Page 2

• Manufacturer Part Number: NUP1105LT1G
• Description: IC BUS PROTECTOR CAN/LIN SOT-23
• Manufacturer: ON Semiconductor

Specifications of NUP1105LT1G

• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 25.7V
• Power (watts): 350W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Polarity: Bidirectional
• Channels: 1 Channel
• Clamping Voltage: 44 V
• Operating Voltage: 24 V (Min)
• Breakdown Voltage: 25.7 V
• Termination Style: SMD/SMT
• Peak Surge Current: 8 A
• Peak Pulse Power Dissipation: 350 W
• Capacitance: 60 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.3 mm W x 2.9 mm L
• Reverse Stand-off Voltage Vrwm: 24V
• Breakdown Voltage Range: 25.7V To 28.4V
• Clamping Voltage Vc Max: 40V
• Peak Pulse Current Ippm: 8A
• Diode Case Style: SOT-23
• No. Of Pins: 3
• Termination Type: SMD
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NUP1105LT1G; NUP1105LT1GOSTR

2. TVS devices are normally selected according to the working peak reverse voltage (V
3. V
4. Pulse waveform per Figure 1.
MAXIMUM RATINGS
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not im-
plied, damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS
Symbol
Symbol
V
ESD
PPK
V
or continuous peak operating voltage level.
RWM
V
V
I
CJ
T
T
T
I
PP
BR
R
BR
C
C
J
J
L
is measured at pulse test current I
Peak Power Dissipation
8 x 20 ms Double Exponential Waveform (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature (10 s)
Human Body model (HBM)
Machine Model (MM)
IEC 61000−4−2 Specification (Contact)
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Clamping Voltage
Maximum Peak Pulse Current
Capacitance
Parameter
(T
J
= 25°C, unless otherwise specified)
T
.
(T
J
Rating
(Note 2)
I
V
I
I
8 x 20 ms Waveform (Note 4)
V
V
= 25°C, unless otherwise specified)
T
PP
PP
RWM
R
R
= 1 mA (Note 3)
= 0 V, f = 1 MHz (Anode to GND)
= 0 V, f = 1 MHz (Anode to Anode)
= 5 A (8 x 20 ms Waveform) (Note 4)
= 8 A (8 x 20 ms Waveform) (Note 4)
= 24 V
Test Conditions
http://onsemi.com
NUP1105L
2
RWM
), which should be equal or greater than the DC
25.7
Min
24
−55 to 150
−55 to 150
Value
350
260
400
Typ
16
30
15
Max
28.4
100
8.0
40
44
60
30
Unit
Unit
nA
°C
°C
°C
kV
kV
pF
W
V
V
V
V
V
A