UESD5.0DT5G ON Semiconductor, UESD5.0DT5G Datasheet - Page 2

• Manufacturer Part Number: UESD5.0DT5G
• Description: DIODE ESD PROTECT 5V SOT-723
• Manufacturer: ON Semiconductor
• Series: µESDr

Specifications of UESD5.0DT5G

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6.2V
• Power (watts): 240mW
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Polarity: Unidirectional
• Channels: 1 Channel
• Operating Voltage: 5 V
• Breakdown Voltage: 6.2 V
• Termination Style: SMD/SMT
• Capacitance: 38 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 0.8 mm W x 1.2 mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UESD5.0DT5G; UESD5.0DT5GOSTR

*Other voltages available upon request.
2. V
ELECTRICAL CHARACTERISTICS
(T
ELECTRICAL CHARACTERISTICS
mESD3.3DT5G
mESD5.0DT5G
mESD6.0DT5G
Symbol
A
V
V
P
= 25°C unless otherwise noted)
I
RWM
V
V
PP
I
I
I
C
BR
BR
R
T
F
pk
C
F
is measured with a pulse test current I
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Forward Current
Forward Voltage @ I
Peak Power Dissipation
Max. Capacitance @V
Device*
Parameter
F
PP
R
Marking
T
Device
= 0 and f = 1 MHz
L0
L2
L3
(T
A
T
= 25°C unless otherwise noted, V
at an ambient temperature of 25°C.
V
RWM
RWM
Max
3.3
5.0
6.0
http://onsemi.com
(V)
2
I
R
(mA) @ V
Max
F
1.0
0.1
0.1
= 1.1 V Max. @ I
V
C
V
RWM
BR
V
RWM
Uni-Directional TVS
F
V
= 10 mA for all types)
BR
(Note 2)
I
F
Min
(V) @ I
5.0
6.2
7.0
I
I
I
I
R
T
PP
V
F
T
mA
1.0
1.0
1.0
I
T
V
C (pF)
Typ
47
38
34