SM8S33A-E3/2D Vishay, SM8S33A-E3/2D Datasheet - Page 4

• Manufacturer Part Number: SM8S33A-E3/2D
• Description: TVS 8W 33V 5% DO-218AB
• Manufacturer: Vishay
• Series: SM8Sr

Specifications of SM8S33A-E3/2D

• Voltage - Reverse Standoff (typ): 33V
• Voltage - Breakdown: 36.7V
• Power (watts): 8W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-218AB
• Polarity: Unidirectional
• Channels: 1 Channel
• Clamping Voltage: 53.3 V
• Operating Voltage: 33 V
• Breakdown Voltage: 36.7 V to 40.6 V
• Termination Style: SMD/SMT
• Peak Surge Current: 124 A
• Peak Pulse Power Dissipation: 6600 W
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 8.7 mm W x 13.7 mm L x 5 mm H
• Reverse Stand-off Voltage Vrwm: 33V
• Breakdown Voltage Range: 36.7V To 40.6V
• Clamping Voltage Vc Max: 53.3V
• Diode Configuration: Unidirectional
• Peak Pulse Current Ippm: 124A
• Diode Case Style: DO-218AB
• Number Of Elements: 1
• Package Type: DO-218AB
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 36.7V
• Reverse Stand-off Voltage: 33V
• Leakage Current (max): 10uA
• Peak Pulse Current: 124A
• Test Current (it): 5mA
• Operating Temp Range: -55C to 175C
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

SM8S10 thru SM8S43A
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
www.vishay.com
4
0.01
100
0.1
10
1
0.01
Figure 5. Typical Transient Thermal Impedance
0.413(10.5)
0.374(9.5)
0.1
0.197(5.0)
0.185(4.7)
t - Pulse Width (s)
0.327(8.3)
0.016 (0.4) MIN.
0.342(8.7)
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For technical questions within your region, please contact one of the following:
1
Lead 2/Metal Heatsink
DO-218AB
0.406(10.3)
0.382(9.7)
0.366(9.3)
0.343(8.7)
0.539(13.7)
0.524(13.3)
0.592(15.0)
0.628(16.0)
10
R
θ
R
JA
θ
JC
100
Lead 1
0.138(3.5)
0.098(2.5)
0.116(3.0)
0.093(2.4)
0.028(0.7)
0.020(0.5)
0.098(2.5)
0.059(1.5)
100 000
10 000
0.413(10.5)
0.374(9.5)
1000
10
Figure 6. Typical Junction Capacitance
Measured at Stand-off
Voltage V
Mounting Pad Layout
15
V
WM
0.343(8.7)
0.366(9.3)
- Reverse Stand-Off Voltage (V)
WM
20
0.606(15.4)
0.583(14.8)
25
0.150(3.8)
0.126(3.2)
Measured at Zero Bias
30
T
f = 1.0 MHz
V
Document Number: 88387
J
sig
35
= 25 °C
0.116(3.0)
0.093(2.4)
0.091(2.3)
0.067(1.7)
= 50 mVp-p
Revision: 21-Oct-08
40
45