1.5SMC33AT3G ON Semiconductor, 1.5SMC33AT3G Datasheet - Page 2

• Manufacturer Part Number: 1.5SMC33AT3G
• Description: TVS 1500W 33V UNIDIRECT SMC
• Manufacturer: ON Semiconductor

Specifications of 1.5SMC33AT3G

• Voltage - Reverse Standoff (typ): 28.2V
• Voltage - Breakdown: 31.4V
• Power (watts): 1500W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Number Of Elements: 1
• Polarity: Uni-Directional
• Package Type: SMC
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 31.4V
• Clamping Voltage: 45.7V
• Reverse Stand-off Voltage: 28.2V
• Leakage Current (max): 5uA
• Peak Pulse Current: 33A
• Peak Pulse Power Dissipation: 1500W
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Reverse Stand-off Voltage Vrwm: 28.2V
• Breakdown Voltage Range: 31.4V To 34.7V
• Clamping Voltage Vc Max: 45.7V
• Diode Configuration: Unidirectional
• Peak Pulse Current Ippm: 33A
• Diode Case Style: 403
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1.5SMC33AT3GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive
2. 1 in. square copper pad, FR−4 board
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403 case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
otherwise noted, V
Symbol
5. 1/2 sine wave or equivalent, PW = 8.3 ms non−repetitive duty
Peak Power Dissipation (Note 1) @ T
DC Power Dissipation @ T
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Thermal Resistance, Junction−to−Lead
DC Power Dissipation (Note 3) @ T
Derate Above 25°C
Thermal Resistance from Junction−to−Ambient
Forward Surge Current (Note 4) @ T
Operating and Storage Temperature Range
V
QV
V
I
V
RWM
V
PP
I
I
I
cycle
BR
R
T
F
C
F
BR
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Maximum Temperature Coefficient of V
Forward Current
Forward Voltage @ I
F
= 3.5 V Max. @ I
L
= 75°C
Parameter
F
PP
T
A
F
A
= 25°C
L
(Note 5) = 100 A)
= 25°C
= 25°C, Pulse Width = 1 ms
(T
Rating
A
= 25°C unless
BR
RWM
http://onsemi.com
2
V
C
V
BR
V
RWM
Symbol
T
Uni−Directional TVS
R
R
I
J
P
FSM
P
P
, T
qJA
qJL
PK
D
D
stg
I
F
I
I
I
I
R
T
PP
V
−65 to +150
F
Value
1500
54.6
18.3
0.75
165
200
4.0
6.1
mW/°C
mW/°C
V
°C/W
°C/W
Unit
°C
W
W
W
A