NUP2105LT1G ON Semiconductor, NUP2105LT1G Datasheet - Page 3

• Manufacturer Part Number: NUP2105LT1G
• Description: IC CAN BUS PROTECTOR DUAL SOT23
• Manufacturer: ON Semiconductor

Specifications of NUP2105LT1G

• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 26.2V
• Power (watts): 350W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Polarity: Bidirectional
• Channels: 2 Channels
• Clamping Voltage: 44 V
• Operating Voltage: 24 V (Min)
• Breakdown Voltage: 26.2 V
• Termination Style: SMD/SMT
• Peak Surge Current: 8 A
• Peak Pulse Power Dissipation: 350 W
• Capacitance: 30 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.3 mm W x 2.9 mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NUP2105LT1GOSTR

100
110
Figure 5. I
90
80
70
60
50
40
30
20
10
35
30
25
20
15
10
25
20
15
10
0
5
0
0
0
0
−40°C
125°C
Figure 3. Typical Junction Capacitance vs
Figure 1. Pulse Waveform, 8 × 20 ms
+65°C
25°C
R
5
2
versus Temperature Characteristics of
+25°C
2
I
L
, LEAKAGE CURRENT (nA)
V
R
, REVERSE VOLTAGE (V)
the NUP2105L
−55°C
10
Reverse Voltage
4
c−t
4
t, TIME (ms)
t
d
15
f = 1.0 MHz, Line to Ground
T
6
= I
A
PP
= +150°C
/2
6
20
TYPICAL PERFORMANCE CURVES
8
WAVEFORM
PARAMETERS
t
t
r
d
= 8 ms
= 20 ms
(T
8
J
25
= 25°C unless otherwise noted)
10
http://onsemi.com
NUP2105L
10
12
30
3
Figure 6. Temperature Power Dissipation Derating of
12.0
10.0
120
100
8.0
6.0
4.0
2.0
0.0
50
45
40
35
30
25
20
15
10
80
60
40
20
Figure 2. Clamping Voltage vs Peak Pulse Current
5
0
0
−60
Figure 4. V
25
20
PULSE WAVEFORM
8 x 20 ms per Figure 1
−30
22
30
BR
V
0
TEMPERATURE (°C)
C
versus I
24
V
, CLAMPING VOLTAGE (V)
the NUP2501L
BR
−55°C
25°C
NUP2105L
, VOLTAGE (V)
30
35
26
T
Characteristics of the
60
28
40
90
65°C
30
120
T
45
A
= +150°C
150 180
32
34
50