1SMB20AT3G ON Semiconductor, 1SMB20AT3G Datasheet - Page 2

• Manufacturer Part Number: 1SMB20AT3G
• Description: TVS 600W 20V UNIDIRECT SMB
• Manufacturer: ON Semiconductor

Specifications of 1SMB20AT3G

• Voltage - Reverse Standoff (typ): 20V
• Voltage - Breakdown: 22.2V
• Power (watts): 600W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Polarity: Unidirectional
• Clamping Voltage: 32.4 V
• Operating Voltage: 20 V
• Breakdown Voltage: 23.35 V
• Termination Style: SMD/SMT
• Peak Surge Current: 18.5 A
• Peak Pulse Power Dissipation: 600 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 3.56 mm W x 4.32 mm L
• Number Of Elements: 1
• Package Type: SMB
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 22.2V
• Reverse Stand-off Voltage: 20V
• Leakage Current (max): 5uA
• Peak Pulse Current: 18.5A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Reverse Stand-off Voltage Vrwm: 20V
• Clamping Voltage Vc Max: 32.4V
• Diode Configuration: Unidirectional
• Diode Case Style: 403A
• No. Of Pins: 2
• Power Dissipation Pd: 550mW
• Breakdown Voltage Vbr: 23.35V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1SMB20AT3GOSTR

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, non−repetitive.
2. 1 in square copper pad, FR−4 board.
3. FR−4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
MAXIMUM RATINGS
ELECTRICAL CHARACTERISTICS
otherwise noted, V
Peak Power Dissipation (Note 1) @ T
DC Power Dissipation @ T
Thermal Resistance from Junction−to−Lead
DC Power Dissipation (Note 3) @ T
Thermal Resistance from Junction−to−Ambient
Forward Surge Current (Note 4) @ T
Operating and Storage Temperature Range
Symbol
V
Measured Zero Lead Length (Note 2)
Derate Above 75°C
Derate Above 25°C
non−repetitive duty cycle.
V
I
RWM
V
V
I
PP
I
I
BR
R
T
F
C
F
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Forward Current
Forward Voltage @ I
F
= 3.5 V Max. @ I
L
= 75°C
Parameter
F
PP
A
T
F
A
= 25°C
L
(Note 5) = 30 A)
= 25°C
= 25°C, Pulse Width = 1 ms
Rating
(T
A
= 25°C unless
RWM
http://onsemi.com
2
V
C
V
Symbol
BR
T
R
R
I
J
P
FSM
P
P
, T
qJA
V
qJL
PK
D
D
RWM
stg
Uni−Directional TVS
I
F
−65 to +150
I
I
I
I
R
T
PP
Value
0.55
600
226
100
3.0
4.4
40
25
V
F
mW/°C
mW/°C
°C/W
°C/W
Unit
°C
W
W
W
A
V