1SMB10AT3G ON Semiconductor, 1SMB10AT3G Datasheet - Page 6

• Manufacturer Part Number: 1SMB10AT3G
• Description: TVS 600W 10V UNIDIRECT SMB
• Manufacturer: ON Semiconductor

Specifications of 1SMB10AT3G

• Voltage - Reverse Standoff (typ): 10V
• Voltage - Breakdown: 11.1V
• Power (watts): 600W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Number Of Elements: 1
• Polarity: Uni-Directional
• Package Type: SMB
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 11.1V
• Clamping Voltage: 17V
• Reverse Stand-off Voltage: 10V
• Leakage Current (max): 5uA
• Peak Pulse Current: 35.3A
• Peak Pulse Power Dissipation: 600W
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Operating Voltage: 10 V
• Breakdown Voltage: 11.7 V
• Termination Style: SMD/SMT
• Peak Surge Current: 35.3 A
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 3.56 mm W x 4.32 mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 1SMB10AT3GOSTR

Recognition for the classification of protectors (QVGQ2)
under the UL standard for safety 497B and File #E210057.
Many competitors only have one or two devices recognized
or have recognition in a non-protective category. Some
competitors have no recognition at all. With the UL497B
recognition, our parts successfully passed several tests
The entire series has Underwriters Laboratory
V
t
D
= TIME DELAY DUE TO CAPACITIVE EFFECT
V
in
Figure 6.
t
d
0.07
0.05
0.03
0.02
0.01
0.7
0.5
0.3
0.1
0.2
1
0.1 0.2
Figure 8. Typical Derating Factor for Duty Cycle
V
in
V
(TRANSIENT)
L
t
0.5
UL RECOGNITION
http://onsemi.com
D, DUTY CYCLE (%)
1
6
2
including Strike Voltage Breakdown test, Endurance
Conditioning,
Voltage-Withstand test, Discharge test and several more.
flammability test for the package material, we have been
recognized for much more to be included in their Protector
category.
Whereas, some competitors have only passed a
V
5
OVERSHOOT DUE TO
INDUCTIVE EFFECTS
10 ms
10
PULSE WIDTH
20
100 ms
10 ms
1 ms
Temperature
50
Figure 7.
100
test,
V
in
V
(TRANSIENT)
L
t
Dielectric