ESD7C5.0DT5G ON Semiconductor, ESD7C5.0DT5G Datasheet - Page 2

• Manufacturer Part Number: ESD7C5.0DT5G
• Description: DIODE ESD PROT 5.0V SOT-723
• Manufacturer: ON Semiconductor

Specifications of ESD7C5.0DT5G

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 11V
• Polarization: 2 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Other names: ESD7C5.0DT5GOSTR

2. V
3. Capacitance of one diode at f = 1 MHz, V
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
5. ESD7C5.0DT5G shown below. Other voltages available upon request.
ELECTRICAL CHARACTERISTICS
(T
*See Application Note AND8308/D for detailed explanations of
ELECTRICAL CHARACTERISTICS
ESD7C3.3DT5G
ESD7C5.0DT5G
Symbol
A
datasheet parameters.
V
V
P
= 25°C unless otherwise noted)
I
RWM
V
V
I
PP
I
I
C
BR
BR
R
T
F
pk
C
F
Device
Figure 1. ESD Clamping Voltage Screenshot
is measured with a pulse test current I
Positive 8 kV Contact per IEC61000-4-2
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Forward Current
Forward Voltage @ I
Peak Power Dissipation
Max. Capacitance @V
Marking
Device
L5
L4
Parameter
V
F
RWM
PP
Max
R
3.3
5.0
T
= 0 and f = 1 MHz
(V)
(T
R
A
I
T
R
= 25°C unless otherwise noted, V
= 0 V, T
at an ambient temperature of 25°C.
(mA) @ V
ESD7C3.3DT5G SERIES
Max
1.0
0.5
A
RWM
= 25°C.
RWM
http://onsemi.com
V
2
BR
(Note 2)
Min
(V) @ I
5.0
11
Figure 2. ESD Clamping Voltage Screenshot
T
F
Negative 8 kV Contact per IEC61000-4-2
V
= 1.1 V Max. @ I
C
V
mA
1.0
1.0
I
BR
T
V
RWM
(Note 3)
C (pF)
Typ
Uni-Directional TVS
6.0
12
F
= 10 mA)
I
F
(Note 3)
C (pF)
Max
I
I
I
I
6.2
13
R
T
PP
V
F
Per IEC61000-4-2
Figures 1 and 2
See Below
(Note 4)
(Note 5)
V
C
V