ESD9B5.0ST5G ON Semiconductor, ESD9B5.0ST5G Datasheet - Page 2

• Manufacturer Part Number: ESD9B5.0ST5G
• Description: DIODE ESD PROT 5.0V SOD-923
• Manufacturer: ON Semiconductor

Specifications of ESD9B5.0ST5G

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.8V
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Polarity: Bidirectional
• Clamping Voltage: 12.5 V
• Operating Voltage: 5 V
• Breakdown Voltage: 5.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 1 A
• Capacitance: 15 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 0.6 mm W x 0.8 mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: ESD9B5.0ST5GOSTR

2. V
3. Surge current waveforms per Figure 5.
4. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
ELECTRICAL CHARACTERISTICS
(T
*See Application Note AND8308/D for detailed explanations of
ELECTRICAL CHARACTERISTICS
ESD9B5.0ST5G
Symbol
A
datasheet parameters.
V
V
= 25°C unless otherwise noted)
I
RWM
V
I
PP
I
BR
BR
R
T
C
Device
Figure 1. ESD Clamping Voltage Screenshot
is measured with a pulse test current I
Positive 8 kV Contact per IEC61000-4-2
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Marking
Device
E
Parameter
V
PP
Max
RWM
(V)
5.0
T
(T
@ V
A
I
R
T
Max
= 25°C unless otherwise noted)
1.0
(mA)
at an ambient temperature of 25°C.
RWM
RWM
Min
V
5.8
ESD9B5.0ST5G
http://onsemi.com
BR
(Note 2)
(V) @ I
Max
7.8
2
T
mA
1.0
I
T
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000-4-2
C (pF)
Max
V
15
C
V
BR
Bi-Directional TVS
V
Max Per 8 x 20 ms
V
C
RWM
(V) @ I
(Note 3)
I
PP
I
12.5
I
R
T
PP
I
I
I
I
PP
R
T
= 1 A
V
RWM
V
Per IEC61000-4-2
BR
Figures 1 and 2
V
See Below
(Note 4)
C
V
V
C