SRDA05-4.TBT Semtech, SRDA05-4.TBT Datasheet - Page 6

• Manufacturer Part Number: SRDA05-4.TBT
• Description: IC TVS ARRAY 4-LINE 5V 8SOIC
• Manufacturer: Semtech
• Series: RailClamp®r

Specifications of SRDA05-4.TBT

• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 4V
• Polarization: 4 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Number Of Elements: 1
• Polarity: Uni-Directional
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 6V
• Clamping Voltage: 15V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 10uA
• Peak Pulse Current: 25A
• Peak Pulse Power Dissipation: 500W
• Test Current (it): 1mA
• Operating Temp Range: -55C to 125C
• Mounting: Surface Mount
• Pin Count: 8
• Diode Type: Low Capacitance
• Clamping Voltage Vc Max: 20V
• Operating Voltage: 1.5V
• Diode Case Style: SOIC
• No. Of Pins: 8
• Peak Pulse Power Ppk @ 8x20us: 500W
• Capacitance, Cd: 4pF
• Breakdown Voltage Vbr: 6V
• Rohs Compliant: Yes
• No. Of Lines Protected Max: 4
• Leaded Process Compatible: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / Rohs Status: Compliant
• Other names: SRDA05-4TR

when the voltage exceeds the V
approximation, the clamping voltage due to the charac-
teristics of the protection diodes is given by:
V
PIN Descriptions
V
However, for fast rise time transient events, the
effects of parasitic inductance must also be consid-
ered as shown in Figure 2. Therefore, the actual
clamping voltage seen by the protected circuit will be:
V
V
ESD current reaches a peak amplitude of 30A in 1ns
for a level 4 ESD contact discharge per IEC 61000-4-2.
Therefore, the voltage overshoot due to 1nH of series
inductance is:
V = L
Example:
Consider a V
steering diode and a series trace inductance of 10nH.
The clamping voltage seen by the protected IC for a
positive 8kV (30A) ESD pulse will be:
V
This does not take into account that the ESD current is
directed into the supply rail, potentially damaging any
components that are attached to that rail. Also note
the high V
for the V
threshold of the protected IC. This is due to the
relatively small junction area of typical discrete compo-
nents. It is also possible that the power dissipation
capability of the discrete diode will be exceeded, thus
destroying the device.
The RailClamp is designed to overcome the inherent
disadvantages of using discrete signal diodes for ESD
suppression. The RailClamp’s integrated TVS diode
helps to mitigate the effects of parasitic inductance in
PROTECTION PRODUCTS
PROTECTION PRODUCTS
© 2007 Semtech Corp.
Applications Information (continued)
C
C
C
C
C
= V
= -V
= V
= -V
= 5V + 30V + (10nH X 30V/nH) = 335V
P
CC
CC
F
di
F
- L
+ V
+ V
ESD
F
F
of discrete diodes to exceed the damage
G
/dt = 1X10
of the discrete diode. It is not uncommon
F
F
di
CC
+ L
ESD
= 5V, a typical V
(for positive duration pulses)
(for negative duration pulses)
P
/dt
di
ESD
/dt (for positive duration pulses)
-9
(30 / 1X10
(for negative duration pulses)
F
F
of 30V (at 30A) for the
of the diode. At first
-9
) = 30V
6
Figure 1 - “Rail-To-Rail” Protection Topology
(First Approximation)
Figure 2 - The Effects of Parasitic Inductance When
Using Discrete Components to Implement Rail-To-Rail
Protection
Figure 3 - Rail-To-Rail Protection Using
RailClamp TVS Arrays
SRDA05-4 and SRDA12-4
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