RCLAMP2504N.TCT Semtech, RCLAMP2504N.TCT Datasheet - Page 6

• Manufacturer Part Number: RCLAMP2504N.TCT
• Description: TVS ARRAY SLP2626P10 10-PIN
• Manufacturer: Semtech
• Series: RailClamp®r

Specifications of RCLAMP2504N.TCT

• Voltage - Reverse Standoff (typ): 2.5V
• Voltage - Breakdown: 2.7V
• Power (watts): 450W
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SLP2626P10
• Reverse Stand-off Voltage Vrwm: 2.5V
• Clamping Voltage Vc Max: 15V
• Diode Case Style: SLP2626P10
• No. Of Pins: 10
• Diode Type: Low Capacitance
• Peak Reflow Compatible (260 C): Yes
• Junction Capacitance: 3.8pF
• Rohs Compliant: Yes
• Number Of Elements: 1
• Polarity: Uni-Directional
• Package Type: SLP EP
• Operating Temperature Classification: Military
• Clamping Voltage: 15V
• Reverse Stand-off Voltage: 2.5V
• Leakage Current (max): 500nA
• Peak Pulse Current: 25A
• Peak Pulse Power Dissipation: 450W
• Operating Temp Range: -55C to 125C
• Mounting: Surface Mount
• Pin Count: 10
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RCLAMP2504NTR

Device Connection Options for Protection of Four
High-Speed Data Lines
These devices are designed to protect low voltage data
lines operating at 2.5 volts or 3.3 volts. When the
voltage on the protected line exceeds the reference
voltage the steering diodes are forward biased,
conducting the transient current away from the
sensitive circuitry.
Data lines are connected at pins 1, 3, 7 and 9. The
center pin should be connected directly to a ground
plane. The path length is kept as short as possible to
minimize parasitic inductance. Pins 2, 4, 6, 8, and 10
are not connected.
Note that pin 5 is connected internally to the cathode
of the low voltage TVS. It is not recommended that
these pins be directly connected to a DC source
greater than the snap-back votlage (V
can latch on as described below.
EPD TVS Characteristics
These devices are constructed using Semtech’s
proprietary EPD technology. By utilizing the EPD tech-
nology, the RClamp2504N and RClamp3304N can
effectively operate at 2.5V and 3.3V respectively while
maintaining excellent electrical characteristics.
The EPD TVS employs a complex nppn structure in
contrast to the pn structure normally found in tradi-
tional silicon-avalanche TVS diodes. Since the EPD
TVS devices use a 4-layer structure, they exhibit a
slightly different IV characteristic curve when compared
to conventional devices. During normal operation, the
device represents a high-impedance to the circuit up to
the device working voltage (V
event, the device will begin to conduct and will enter a
low impedance state when the punch through voltage
(V
voltage TVS will exhibit a slight negative resistance
characteristic as it conducts current. This characteris-
tic aids in lowering the clamping voltage of the device,
but must be considered in applications where DC
voltages are present.
When the TVS is conducting current, it will exhibit a
slight “snap-back” or negative resistance
characteristics due to its structure. This point is
PROTECTION PRODUCTS
Applications Information
PT
2008 Semtech Corp.
) is exceeded. Unlike a conventional device, the low
RWM
). During an ESD
SB
) as the device
RClamp2504N & RClamp3304N
6
defined on the curve by the snap-back voltage (V
and snap-back current (I
conducting state, the current through the device must
fall below the I
voltage must fall below the V
3.3V device). If a 3.3V TVS is connected to 3.3V DC
source, it will never fall below the snap-back voltage of
2.8V and will therefore stay in a conducting state.
, 2
Figure 1
Figure 1
Figure 1
Figure 1
Figure 1. Pin Conf
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