RCLAMP0504N.TCT Semtech, RCLAMP0504N.TCT Datasheet - Page 5

• Manufacturer Part Number: RCLAMP0504N.TCT
• Description: IC TVS ARRAY 4-LINE 5V 6-SLP
• Manufacturer: Semtech
• Series: RailClamp®r

Specifications of RCLAMP0504N.TCT

• Mfg Application Notes: TVS Diode AppNote SI04-14
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6V
• Power (watts): 300W
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: 6-SLP
• Number Of Elements: 1
• Polarity: Uni-Directional
• Package Type: SLP EP
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 6V
• Clamping Voltage: 17.5V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 5uA
• Peak Pulse Current: 5A
• Peak Pulse Power Dissipation: 300W
• Test Current (it): 1mA
• Operating Temp Range: -55C to 125C
• Mounting: Surface Mount
• Pin Count: 6
• Reverse Stand-off Voltage Vrwm: 5V
• Clamping Voltage Vc Max: 17.5V
• Diode Case Style: SLP2020P6
• No. Of Pins: 6
• Diode Type: Low Capacitance
• Peak Reflow Compatible (260 C): Yes
• Rohs Compliant: Yes
• Junction Capacitance: 3pF
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RCLAMP0504NTR

PIN Descriptions
Therefore, the voltage overshoot due to 1nH of series
inductance is:
V = L
Example:
Consider a V
steering diode and a series trace inductance of 10nH.
The clamping voltage seen by the protected IC for a
positive 8kV (30A) ESD pulse will be:
V
This does not take into account that the ESD current is
directed into the supply rail, potentially damaging any
components that are attached to that rail. Also note
that it is not uncommon for the V
exceed the damage threshold of the protected IC. This
is due to the relatively small junction area of typical
discrete components. It is also possible that the
power dissipation capability of the discrete diode will
be exceeded, thus destroying the device.
The RailClamp is designed to overcome the inherent
disadvantages of using discrete signal diodes for ESD
suppression. The RailClamp’s integrated TVS diode
helps to mitigate the effects of parasitic inductance in
the power supply connection. During an ESD event,
the current will be directed through the integrated TVS
diode to ground. The maximum voltage seen by the
protected IC due to this path will be the clamping
voltage of the device.
When Using Discrete Components to Implement
When Using Discrete Components to Implement
When Using Discrete Components to Implement
When Using Discrete Components to Implement
When Using Discrete Components to Implement
PROTECTION PRODUCTS
Applications Information (continued)
C
Figure 2 - The Effects of Parasitic Inductance
Figure 2 - The Effects of Parasitic Inductance
Figure 2 - The Effects of Parasitic Inductance
Figure 2 - The Effects of Parasitic Inductance
Figure 2 - The Effects of Parasitic Inductance
2008 Semtech Corp.
= 5V + 30V + (10nH X 30V/nH) = 335V
P
di
ESD
/dt = 1X10
CC
= 5V, a typical V
Rail-
Rail-
Rail-
Rail-T T T T T o-Rail Pr
Rail-
o-Rail Pr
o-Rail Pr
o-Rail Pr
o-Rail Pro o o o o t t t t t ection
-9
(30 / 1X10
F
of 30V (at 30A) for the
F
ection
ection
ection
ection
of discrete diodes to
-9
) = 30V
5
ETHERNET PROTECTION
Ethernet ICs are vulnerable to damage from electro-
static discharge (ESD), lightning, and cable discharge
events (CDE). The internal protection in the PHY chip,
if any, often is not enough due to the high energy of
these disturbances. The fatal discharge can occur
differentially across the transmit or receive line pair or
between any line and ground (common mode).
Common mode and differential mode protection
against ESD and CDE discharges can be achieved by
connecting the RClamp0504N on the PHY side of the
Ethernet circuit as shown in Figure 4. Pins 1, 3, 4, and
6 are connected to the transmit and receive line pairs.
Since there is no Vcc connection at the connector, pin
5 of the RClamp0504N should not be connected. Pin
2 is connected to ground. This connection should be
made directly to the ground plane. All path lengths
should be kept as short as possible to minimize para-
sitic inductance. This configuration can be used to
meet the ESD immunity requirements of IEC 61000-4-
2 and cable discharge events.
Figure 3 - Rail-
Figure 3 - Rail-
Figure 3 - Rail-T T T T T o-Rail Pr
Figure 3 - Rail-
Figure 3 - Rail-
RailClam
RailClam
RailClamp T
RailClam
RailClam
o-Rail Pr
o-Rail Pr
o-Rail Pro o o o o t t t t t ection Using
o-Rail Pr
p T
p T V V V V V S Arra
p T
p T
RClamp0504N
S Arra
S Arra
S Arrays ys ys ys ys
S Arra
ection Using
ection Using
ection Using
ection Using
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