RSB12JS2T2R Rohm Semiconductor, RSB12JS2T2R Datasheet

RSB12JS2T2R

Manufacturer Part Number

RSB12JS2T2R

Description

DIODE ZENER ESD PROT EMD6

Manufacturer

Rohm Semiconductor

Datasheet

1.RSB12JS2T2R.pdf (3 pages)

Specifications of RSB12JS2T2R

Voltage - Reverse Standoff (typ)

Voltage - Breakdown

9.6V

Polarization

2 Channel Array - Bidirectional

Mounting Type

Surface Mount

Package / Case

SC-75-6, EMD6

Emd6

Diode Case Style

No. Of Pins

Power Dissipation Pd

150mW

Svhc

No SVHC (18-Jun-2010)

Breakdown Voltage

12V

Capacitance Cd @ Vr Typ

1pF

Diode Type

Low Capacitance

Operating Temperature Range

-55Â°C To

Zener Voltage

12 V

Voltage Tolerance

20 %

Zener Current

0.1 uA

Power Dissipation

150 mW

Maximum Reverse Leakage Current

0.1 uA

Mounting Style

SMD/SMT

Termination Style

SMD/SMT

Dimensions

1.2 mm W x 1.6 mm L x 0.4 mm H

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Power (watts)

Lead Free Status / Rohs Status

Lead free / RoHS Compliant

Other names

RSB12JS2T2RTR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

RSB12JS2T2R

Manufacturer:

Rohm Semiconductor

Quantity:

94 443

Company:

Meier Automation Equipment Co., Limited

Part Number:

RSB12JS2T2R

Manufacturer:

ROHM/罗姆

Quantity:

20 000

Company:

H&T Electronics

Part Number:

RSB12JS2T2R

Quantity:

9 000

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Download datasheet (133Kb)

Diodes

Low Capacitance Protection Device

RSB12JS2

ESD Protection

1) Ultra small mold type. (EMD6)

2) Low capacitance

3) Bi direction

Silicon Epitaxial Planar

Zener voltage

Revers e current

Capacitance between term inal

Power dis s ipation

Junction tem perature

Storage tem perature

Features

Electrical characteristics (Ta=25°C)

Application

Construction

Absolute maximum ratings (Ta=25°C)

Param eter

Sym bol

JEITA : SC-75A Size

Taping specifications (Unit : mm)

ROHM : EMD6

Ts tg

0.22±0.05

Min.

dot (year week factory)

9.6

Dimensions (Unit : mm)

(6)

(1)

0.5

1.6±0.1

1.0±0.1

1.7±0.05

4.0±0.1

(5)

(2)

0.5

Typ.

(4)

(3)

2.0±0.05

1PIN

-55 to +150

14.4

0.10

Max.

Lim its

4.0±0.1

150

0.5±0.05

φ1.5

0.13±0.05

Unit

µA

+0.1

−0

0～0.1

f=1MHz,V

*Please make 3 and 6 Pin open in circuit upon use.

=5m A

=9V

Land size figure (Unit : mm)

Structure

EMD6

φ0.8±0.1

(1)

(6)

Unit

m W

℃

(2)

0.25 0.15

(5)

(3)

(4)

0.4

=0V

0.5

Conditions

1.0

0.3

Rev.C

0.15

0.5

RSB12JS2

0.3±0.1

0.65±0.1

0.25

1/2

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RSB12JS2T2R Summary of contents

Page 1

Diodes Low Capacitance Protection Device RSB12JS2 Application ESD Protection Features 1) Ultra small mold type. (EMD6) 2) Low capacitance 3) Bi direction Construction Silicon Epitaxial Planar Absolute maximum ratings (Ta=25°C) Param eter Power dis s ipation Junction tem perature Storage ...

Page 2

Diodes Electrical characteristics curve 10 1 Ta=25℃ Ta=75℃ Ta=125℃ 0.1 Ta=-25℃ Ta=150℃ 0.01 0.001 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 13.8 Ta=25℃ IZ=5mA 13.7 n=30pcs 13.6 13.5 AVE:13.572V 13.4 13.3 Vz DISRESION MAP 100 10 1 0.1 ...

Page 3

Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...

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