RSA6.1ENTR Rohm Semiconductor, RSA6.1ENTR Datasheet - Page 2

• Manufacturer Part Number: RSA6.1ENTR
• Description: TVS DIODE 30W 3V 2CH BI SOT-353
• Manufacturer: Rohm Semiconductor

Specifications of RSA6.1ENTR

• Voltage - Reverse Standoff (typ): 3V
• Voltage - Breakdown: 6.1V
• Power (watts): 30W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SC-70-5, SC-88A, SOT-323-5, SOT-353, 5-TSSOP
• 4 Elements: UMD5
• No. Of Pins: 5
• Power Dissipation Pd: 200mW
• Svhc: No SVHC (18-Jun-2010)
• Breakdown Voltage: 6.1V
• Capacitance Cd @ Vr Typ: 90pF
• Diode Type: TVS
• Operating Temperature Range: -55°C To
• Zener Voltage: 6.65 V
• Voltage Tolerance: 8 %
• Zener Current: 1 uA
• Power Dissipation: 200 mW
• Maximum Reverse Leakage Current: 1 uA
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Forward Voltage Drop: 1.25 V
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Diodes
Electrical characteristic curves (Ta=25°C)
100
0.001
10
7.2
7.1
6.9
6.8
6.7
1
0.01
0.1
7
0.1
10
1
6
Zz-Iz CHARACTERISTICS
Ta=-25℃
Ta=25℃
ZENER CURRENT(mA)
Vz-Iz CHARACTERISTICS
6.5
ZENER VOLTAGE:Vz(V)
Vz DISRESION MAP
AVE:6.891V
1
7
Ta=25℃
n=30pcs
IZ=1mA
7.5
Ta=75℃
Ta=125℃
Ta=150℃
10
8
0.00001
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.0001
1000
0.001
0.2
0.1
100
1000
0.01
10
0
100
0.1
1
0.001
10
1
0
0.01
0.5
Rth-t CHARACTERISTICS
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
IR DISRESION MAP
0.1
AVE:0.0190nA
1
Mounted on epoxy board
IM=10mA
TIME:t(s)
1ms
1
1.5
300us
Ta=150℃
time
10
2
IF=100mA
Ta=25℃
n=30pcs
VR=3V
Rth(j-c)
Rth(j-a)
Ta=125℃
Ta=-25℃
100
Ta=25℃
Ta=75℃
2.5
1000
3
1000
100
150
140
130
120
110
100
10
90
80
70
60
50
1
0
0.5
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE:VR(V)
Ct DISRESION MAP
1
AVE:99.8pF
Rev.C
1.5
RSA6.1EN
2
Ta=25℃
n=10pcs
f=1MHz
VR=0V
f=1MHz
2.5
3
2/2