RSA6.1J4T2R Rohm Semiconductor, RSA6.1J4T2R Datasheet
Home Circuit Protection TVS - Diodes RSA6.1J4T2R
Manufacturer Part Number
RSA6.1J4T2R
Description
TVS DIODE 80W 3V 2CH BI SC-75A
Manufacturer
Rohm Semiconductor
Specifications of RSA6.1J4T2R
Voltage - Reverse Standoff (typ)
3V
Voltage - Breakdown
6.1V
Power (watts)
80W
Polarization
2 Channel Array - Bidirectional
Mounting Type
Surface Mount
Package / Case
SC-75-5, EMD5
Diode Configuration
Dual Common Anode
Diode Case Style
SC-75A
No. Of Pins
5
Svhc
No SVHC (18-Jun-2010)
Zener Voltage
6.65 V
Voltage Tolerance
8 %
Zener Current
1 uA
Maximum Reverse Leakage Current
1 uA
Mounting Style
SMD/SMT
Forward Voltage Drop
1 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
RSA6.1J4T2RTR
Available stocks
Diodes
ESD Protection diode
RSA 6.1J4
ESD protection
1) Ultra small mold type. (EMD5)
2) High reliability.
Silicon epitaxial planar
Zener voltage
Revers e current
Forward voltage
Capacitance between term inals
Peak puls e power-1 (tp=10×1000us )
Peak puls e power-2 (tp=8×20us )
Junction tem perature
Storage tem perature
Features
Construction
Electrical characteristics (Ta=25°C)
Application
Absolute maximum ratings (Ta=25°C)
Param eter
Param eter
Sym bol
Sym bol
V
V
C
Ts tg
I
R
P
P
Z
F
Tj
t
pk
pk
Taping specifications (Unit : mm)
1.7±0.05
Min.
Dimensions (Unit : mm)
6.1
JEITA : SC-75A Size
4.0±0.1
ROHM : EMD5
-
-
-
0.22±0.05
dot (year week factory)
(5)
(1)
0.5
-55 to +150
1.6±0.1
1.0±0.1
Lim its
Typ.
2.0±0.05
1PIN
35
150
-
-
-
10
80
(2)
0.5
4.0±0.1
7.20
(4)
Max.
(3)
1.0
1.0
-
φ1.5
+0.1
−0
0.5±0.05
Unit
µA
pF
V
V
0.13±0.05
Unit
W
W
℃
℃
Land size figure (Unit : mm)
0~0.1
I
V
I
f=1MHz,V
Z
F
R
=1m A
=100m A
=3.0V
φ0.8±0.1
R
Structure
=0V
EMD5
Conditions
0.25 0.15
Rev.C
0.4
0.3±0.1
0.65±0.1
RSA6.1J4
0.5
0.3
0.15
0.5
0.25
1/2
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RSA6.1J4T2R Summary of contents
Diodes ESD Protection diode RSA 6.1J4 Application ESD protection Features 1) Ultra small mold type. (EMD5) 2) High reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Param eter Peak puls e power-1 (tp=10×1000us ) Peak puls e power-2 (tp=8×20us ...
Diodes Electrical characteristic curves (Ta=25°C) 10 Ta=75℃ 1 Ta=25℃ Ta=125℃ Ta=150℃ Ta=-25℃ 0.1 0.01 0.001 6 6.5 7 7.5 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 6.9 Ta=25℃ IZ=1mA 6.8 n=30pcs 6.7 6.6 6.5 AVE:6.684V 6.4 Vz DISRESION MAP 100 10 1 0.1 ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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