GMF05C-HS3-GS08 Vishay, GMF05C-HS3-GS08 Datasheet - Page 2

• Manufacturer Part Number: GMF05C-HS3-GS08
• Description: DIODE ARRAY ESD 5.0V LLP75-6A
• Manufacturer: Vishay
• Series: GMF05C-HS3r

Specifications of GMF05C-HS3-GS08

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6V
• Power (watts): 200W
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Package / Case: 6-LLP
• Polarity: Bidirectional
• Channels: 5 Channels
• Clamping Voltage: 12.5 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6 V to 8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 12 A
• Peak Pulse Power Dissipation: 200 W
• Capacitance: 126 pF
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.65 mm W x 1.65 mm L x 0.8 mm H
• Clamping Voltage Vc Max: 12.5V
• Diode Case Style: LLP75
• No. Of Pins: 6
• Diode Type: ESD Protection
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1413-2; GMF05C-HS3-GS08GITR; GMF05C-HS3-GS08GITR

GMF05C-HS3
Vishay Semiconductors
Absolute Maximum Ratings
BiAs-Mode (5-line Bidirectional Asymmetrical protection mode)
With the GMF05C-HS3 up to 5 signal- or data-lines (L1 - L5) can be protected against voltage transients. With
pin 2 connected to ground and pin 1; 3 up tp pin 6 connected to a signal- or data-line which has to be protected.
As long as the voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum
Reverse Working Voltage (V
the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (V
the ground level.
Due to the different clamping levels in forward and reverse direction the GMF05C-HS3 clamping behaviour is
Bidirectional and Asymmetrical (BiAs).
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2
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
20739
L1
L2
Rating
BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2)
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RWM
BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2);
BiAs-mode: each input (pin 1; 3 - pin 6) to ground (pin 2);
1
2
3
) the protection diode between data line and ground offer a high isolation to
acc. IEC 61000-4-5; t
acc. IEC 61000-4-5; t
acc. IEC61000-4-2; 10 pulses
5
4
3
Junction temperature
Test condition
p
p
= 8/20 µs; single shot
= 8/20 µs; single shot
C
) is defined by the BReakthrough Voltage (V
L5
L3
L4
F
) clamps the negative transient close to
discharge
discharge
contact
air
Symbol
V
V
T
I
P
PPM
ESD
ESD
T
STG
PP
J
Document Number 85654
- 55 to + 125
- 55 to + 150
Rev. 1.8, 23-Sep-08
Value
± 30
± 30
200
12
BR
) level
Unit
kV
kV
°C
°C
W
A