VESD05A1-02V-GS08 Vishay, VESD05A1-02V-GS08 Datasheet - Page 2

• Manufacturer Part Number: VESD05A1-02V-GS08
• Description: DIODE SGL ESD 5.0V SOD523
• Manufacturer: Vishay
• Series: VESD05A1-02Vr

Specifications of VESD05A1-02V-GS08

• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6V
• Power (watts): 192W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SOD-523
• Polarity: Bidirectional
• Channels: 1 Channel
• Clamping Voltage: 12 V
• Operating Voltage: 5 V (Min)
• Breakdown Voltage: 6.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 16 A
• Peak Pulse Power Dissipation: 192 W
• Capacitance: 130 pF
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Dimensions: 0.9 mm W x 1.3 mm L x 0.7 mm H
• Reverse Stand-off Voltage Vrwm: 5V
• Breakdown Voltage Range: 6V To 7.5V
• Clamping Voltage Vc Max: 12V
• Diode Configuration: Bidirectional
• Peak Pulse Current Ippm: 16A
• Diode Case Style: SOD-523
• No. Of Pins: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1440-2; VESD05A1-02V-GS08GITR; VESD05A1-02V-GS08GITR

VESD05A1-02V
Vishay Semiconductors
BiAs-Mode (Bidirectional Asymmetrical protection mode)
With the VESD05A1-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1
connected to ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the
voltage level on the data- or signal-line is between 0 V (ground level) and the specified Maximum Reverse
Working Voltage (V
line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection
diode, the diode becomes conductive and shorts the transient current to ground. Now the protection device
behaves like a closed switch. The Clamping Voltage (V
plus the voltage drop at the series impedance (resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the
forward direction of the protection diode. The low Forward Voltage (V
the ground level.
Due to the different clamping levels in forward and reverse direction the VESD05A1-02V clamping behaviour
is Bidirectional and Asymmetrical (BiAs).
Electrical Characteristics
Ratings at 25 °C ambient temperature, unless otherwise specified
VESD05A1-02V
BiAs mode (between pin 1 and pin 2)
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2
Protection paths
Reverse stand off voltage
Reverse current
Reverse break down voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
Parameter
L1
RWM
) the protection diode between data line and ground offers a high isolation to the ground
Number of lines which can be protected
at I
at I
For technical support, please contact: [e-mail]
PP
PP
at I
at I
at I
= I
= I
PP
PP
PP
at V
Test conditions/remarks
at V
PPM
PPM
= 0.2 A; 8/20 µs test pulse
= 1 A; 8/20 µs test pulse
= 1 A; 8/20 µs test pulse
R
R
at I
= 16 A; 8/20 µs test pulse
= 16 A; 8/20 µs test pulse
= 2.5 V; f = 1 MHz
at I
at V
= 0 V; f = 1 MHz
R
R
R
= 1 mA
= 1 µA
= 5 V
C
) is defined by the BReakthrough Voltage (V
Symbol
V
N
V
RWM
V
V
C
C
V
V
V
lines
I
BR
R
C
C
F
F
F
D
D
F
) clamps the negative transient close to
Min.
5
6
< 0.1
10.5
0.88
Typ.
130
6.8
7.2
1.0
3.2
76
20280
Document Number 84702
Max.
150
7.5
8.5
1.1
1.5
4.5
12
1
1
Rev. 1.3, 27-Oct-08
BR
lines
Unit
µA
) level
pF
pF
V
V
V
V
V
V
V