IRF840A Vishay, IRF840A Datasheet

IRF840A

Manufacturer Part Number

IRF840A

Description

MOSFET N-CH 500V 8A TO-220AB

Manufacturer

Vishay

Datasheets

1.IRF840A.pdf (8 pages)

2.IRF840A.pdf (8 pages)

Specifications of IRF840A

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

850 mOhm @ 4.8A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

38nC @ 10V

Input Capacitance (ciss) @ Vds

1018pF @ 25V

Power - Max

125W

Mounting Type

Through Hole

Package / Case

TO-220-3 (Straight Leads)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.85 Ohms

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

30 V

Continuous Drain Current

8 A

Power Dissipation

125 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

*IRF840A

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Part Number

Manufacturer

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Price

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Current page: 1 of 8
Download datasheet (139Kb)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V

c. I

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91065

S-81275-Rev. A, 16-Jun-08

PRODUCT SUMMARY

Configuration

ORDERING INFORMATION

Package

Lead (Pb)-free

SnPb

ABSOLUTE MAXIMUM RATINGS T

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Linear Derating Factor

Single Pulse Avalanche Energy

Repetitive Avalanche Current

Repetitive Avalanche Energy

Maximum Power Dissipation

Peak Diode Recovery dV/dt

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

Mounting Torque

DS(on)

(Max.) (nC)

(nC)

(V)

≤ 8.0 A, dI/dt ≤ 100 A/µs, V

= 50 V, starting T

(Ω)

TO-220

= 25 °C, L = 16 mH, R

≤ V

= 10 V

N-Channel MOSFET

, T

Single

500

≤ 150 °C.

9.0

= 25 Ω, I

Power MOSFET

0.85

= 25 °C, unless otherwise noted

6-32 or M3 screw

at 10 V

= 8.0 A (see fig. 12).

for 10 s

= 25 °C

TO-220

IRF840APbF

SiHF840A-E3

IRF840A

SiHF840A

= 100 °C

= 25 °C

FEATURES

• Low Gate Charge Q

• Improved Gate, Avalanche and Dynamic dV/dt

• Fully Characterized Capacitance and Avalanche Voltage

• Effective C

• Lead (Pb)-free Available

APPLICATIONS

• Switch Mode Power Supply (SMPS)

• Uninterruptable Power Supply

• High Speed Power Switching

TYPICAL SMPS TOPOLOGIES

• Two Transistor Forward

• Half Bridge

• Full Bridge

Requirement

Ruggedness

and Current

SYMBOL

dV/dt

oss

, T

stg

Specified

IRF840A, SiHF840A

Results in Simple Drive

- 55 to + 150

LIMIT

300

± 30

500

510

125

8.0

5.1

1.0

8.0

5.0

1.1

Vishay Siliconix

www.vishay.com

lbf · in

UNIT

W/°C

N · m

V/ns

RoHS*

COMPLIANT

°C

Available

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