CA3082 Intersil, CA3082 Datasheet - Page 2

• Manufacturer Part Number: CA3082
• Description: GEN.P. HIGH CURR. NPN TRANS. C.C
• Manufacturer: Intersil

Specifications of CA3082

• Rohs Status: RoHS non-compliant

Absolute Maximum Ratings
Collector-to-Emitter Voltage (V
Collector-to-Base Voltage (V
Collector-to-Substrate Voltage (V
Emitter-to-Base Voltage (V
Collector Current (I
Base Current (I
Operating Conditions
Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
Electrical Specifications
Typical Read - Out Driver Applications
Collector-to-Base Breakdown Voltage
Collector-to-Substrate Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
DC Forward Current Transfer Ratio
Base-to-Emitter Saturation Voltage (Figure 4)
Collector-to-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
1. The collector of each transistor of the CA3081 and CA3082 is isolated from the substrate by an integral diode. The substrate must be connected
2. θ
FIGURE 1. SCHEMATIC DIAGRAM SHOWING ONE
DECODER
to a voltage which is more negative than any collector voltage in order to maintain isolation between transistors and provide normal transistor
action. To avoid undesired coupling between transistors, the substrate terminal (5) should be maintained at either DC or signal (AC) ground. A
suitable bypass capacitor can be used to establish a signal ground.
CA3081, CA3082
CA3081 (Figure 5)
CA3082 (Figure 5)
JA
FROM
is measured with the component mounted on an evaluation PC board in free air.
B
TRANSISTOR OF THE CA3081 DRIVING ONE
SEGMENT OF AN INCANDESCENT DISPLAY
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
PARAMETER
C
) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
V+
1/7 CA3081
(COMMON EMITTER)
1 SEGMENT OF INCANDESCENT DISPLAY
(DR2000 SERIES OR EQUIVALENT)
EBO
CBO
CEO
) . . . . . . . . . . . . . . . . . . . . . . . . . 5V
) . . . . . . . . . . . . . . . . . . . . . . . 20V
CIO
2
) . . . . . . . . . . . . . . . . . . . . . .16V
For Equipment Design at T
, Note 1) . . . . . . . . . . . . . 20V
T
A
= 25
o
C
V
V
V
SYMBOL
V
o
V
V
(BR)CBO
(BR)CEO
(BR)EBO
C to 125
(BR)CIO
BESAT
CESAT
I
I
h
CEO
CBO
FE
CA3081, CA3082
A
= 25
o
C
I
I
I
I
V
V
I
I
I
I
V
V
o
C
C
C
C
C
C
C
C
CE
CE
CE
CB
C
= 500µA, I
= 500µA, I
= 1mA, I
= 500µA
= 30mA, I
= 30mA, I
= 50mA, I
= 50mA, I
= 0.5V, I
= 0.8V, I
= 10V, I
= 10V, I
TEST CONDITIONS
Thermal Information
Thermal Resistance (Typical, Note 2)
Maximum Power Dissipation (Any One Transistor) . . . . . . . 500mW
Maximum Junction Temperature (Ceramic Package). . . . . . . . . 175
Maximum Junction Temperature (Plastic Package) . . . . . . . .150
Maximum Storage Temperature Range . . . . . . . . . -65
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300
NOTE: The Resistance for R is determined by the relationship:
Where: V
R
R
B
CERDIP Package. . . . . . . . . . . . . . . . .
PDIP Package . . . . . . . . . . . . . . . . . . .
SOIC Package . . . . . . . . . . . . . . . . . . .
(SOIC - Lead Tips Only)
B
B
B
B
=
=
FIGURE 2. SCHEMATIC DIAGRAM SHOWING ONE
B
E
E
B
= 0
C
C
= 1mA
= 1mA
= 5mA
= 5mA
= 0
= 0
= 0
= 0
V
------------------------------------------------------ -
0 for V
= 30mA
= 50mA
V
0V
P
P
V
–
P
F
V
= Input Pulse Voltage
= Forward Voltage Drop Across the Diode
BE
P
I LED
(
=
TRANSISTOR OF THE CA3082 DRIVING A LIGHT
EMITTING DIODE (LED)
–
V
V
F
)
BE
(
LED
+
V
F
V+
)
(
LED
MIN
5.0
20
20
16
30
40
1/7 CA3082
(COMMON COLLECTOR)
-
-
-
-
-
-
R (NOTE)
)
LIGHT EMITTING DIODE (LED)
40736R
TYP
0.87
0.27
6.9
0.4
0.4
60
60
24
68
70
-
-
θ
JA
115
(
100
190
o
C/W) θ
MAX
1.2
0.5
0.7
0.8
1.0
10
-
-
-
-
-
-
o
C to 150
JC
UNITS
N/A
N/A
(
45
o
µA
µA
V
V
V
V
V
V
V
V
-
-
C/W)
o
o
o
o
C
C
C
C