STEVAL-ISF001V1 STMicroelectronics, STEVAL-ISF001V1 Datasheet

BOARD EVAL FOR L6563/STW55NM60N

STEVAL-ISF001V1

Manufacturer Part Number
STEVAL-ISF001V1
Description
BOARD EVAL FOR L6563/STW55NM60N
Manufacturer
STMicroelectronics
Type
MOSFET & Power Driverr

Specifications of STEVAL-ISF001V1

Main Purpose
Power Management, Power Factor Correction
Embedded
No
Utilized Ic / Part
L6563
Primary Attributes
3 kW, 400 V Out, FOT(Fixed Off Time Control), 240 VAC (185 ~ 265 Vrms)
Secondary Attributes
Iout Max 7.5 A
Product
Power Management Modules
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
STW55NM60N
Other names
497-8850
Features
Application
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
Table 1.
July 2008
STW55NM60N
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Switching applications
STW55NM60N
Type
N-channel 600 V, 0.047 Ω, 51 A, MDmesh™ II Power MOSFET
Order code
Device summary
(@Tjmax)
650 V
V
DSS
< 0.060 Ω
R
max
DS(on)
W55NM60N
Marking
51 A
I
D
Rev 4
Figure 1.
Package
TO-247
Internal schematic diagram
STW55NM60N
TO-247
1
Packaging
2
3
Tube
TO-247
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STEVAL-ISF001V1 Summary of contents

Page 1

N-channel 600 V, 0.047 Ω MDmesh™ II Power MOSFET Features V DSS Type (@Tjmax) STW55NM60N 650 V ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STW55NM60N 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate- source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed) DM ...

Page 4

Electrical characteristics 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source V (BR)DSS breakdown voltage (1) dv/dt Drain source voltage slope Zero gate voltage I DSS drain current (V Gate-body leakage I GSS current ...

Page 5

STW55NM60N Table 7. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Turn-off delay time d(off) t Fall time f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM ...

Page 6

Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Transconductance 6/12 Figure 3. Thermal impedance Figure 5. Transfer characteristics Figure 7. Static drain-source on resistance STW55NM60N ...

Page 7

STW55NM60N Figure 8. Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Figure 12. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 13. Normalized B VDSS ...

Page 8

Test circuit 3 Test circuit Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/12 Figure 15. Gate charge test circuit Figure 17. ...

Page 9

STW55NM60N 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the ...

Page 10

Package mechanical data Dim øP øR S 10/12 TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 ...

Page 11

STW55NM60N 5 Revision history Table 9. Document revision history Date 06-Nov-2007 19-Dec-2007 16-Jan-2008 31-Jul-2008 Revision 1 Initial release Figure 9: Capacitance variations 2 3 Document status promoted from preliminary data to datasheet value has been updated in AS ...

Page 12

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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