MOC119 Fairchild Optoelectronics Group, MOC119 Datasheet
MOC119
Specifications of MOC119
MOC119QT
MOC119QTT
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Related parts for MOC119
MOC119 Summary of contents
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... DESCRIPTION The MOC119 device has a gallium arsenide infrared emitting diode coupled to a silicon darlington phototransistor. FEATURES • High current transfer ratio of 300% • No base connection for improved noise immunity • Underwriters Laboratory (UL) recognized File# E90700 APPLICATIONS • Appliances, measuring instruments • I/O interface for computers • ...
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... Test Conditions ( mA Test Conditions ( 100 , mA Test Conditions (I 1 µA, 1 min.) I µA, 1 min.) I 500 VDC) I MHz mA mA MOC119 Symbol Min Typ** Max V 1.15 1 0.05 100 CEO BV 7 ECO I 100 CEO Symbol Min Typ** Max CTR 30 (300) 45 (450) Symbol Min Typ** Max t 3 ...
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... 70˚ 100˚ -55˚ 100 - LED INPUT CURRENT (mA) 10000 1000 = 10 mA 100 = 0 0. 1000 100 100 (NO BASE CONNECTION) MOC119 10 1 NORMALIZED TO: CTR @ 25˚ -80 -60 -40 - 100 T - AMBIENT TEMPERATURE (˚C) A Fig. 2 Current Transfer Ratio vs. Ambient Temperature NORMALIZED TO 25˚ AMBIENT TEMPERATURE (˚ ...
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... User Direction of Feed (NO BASE CONNECTION) MOC119 Description Surface Mount Lead Bend Surface Mount; Tape and reel 0.4” Lead Spacing VDE 0884 VDE 0884, 0.4” Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & ...
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT ...