4N25M Lite-On Electronics, 4N25M Datasheet - Page 8

• Manufacturer Part Number: 4N25M
• Description: OPTOISOLATOR W/BASE 6-DIP
• Manufacturer: Lite-On Electronics

Specifications of 4N25M

• Output Type: Transistor with Base
• Input Type: DC
• Package / Case: 6-DIP
• Number Of Channels: 1
• Voltage - Isolation: 2500Vrms
• Current Transfer Ratio (min): 20% @ 10mA
• Voltage - Output: 30V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 80mA
• Vce Saturation (max): 500mV
• Mounting Type: Through Hole
• Maximum Input Diode Current: 80 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Phototransistor
• Configuration: 1 Channel
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 0.5 V
• Isolation Voltage: 2500 Vrms
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 250 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 4N25MLT

 
   

Fig.1 Forward Current vs. Ambient
Fig.3 Forward Current vs. Forward
Fig.5 Collector Current vs.
Temperature
Collector-emitter Voltage
Voltage
100
500
200
100
80
60
40
20
50
20
10
15
10
5
-55
0
5
2
1
0
0
0
Ta= 25 C
-25
Collector-emitter voltage V (V)
Ambient temperature Ta ( C)
0.5
Forward voltage V (V)
o
0
1.0
5
o
o


   
I = 40mA
25
F
1.5
30mA
20mA
10mA
5mA
50
2.0

     
10
75
F
Pc(MAX.)
CE
2.5
100
o
o
o
o
125
3.0
15
Fig.6 Relative Current Transfer Ratio
Fig.2 Collector Power Dissipation vs.
Fig.4 Current Transfer Ratio vs. Forward
Ambient Temperature
Current
vs. Ambient Temperature
200
150
100
300
200
100
50
40
30
20
10
50
-55
0
0
0
-55
0.1 0.2 0.5
V = 10V
Ta= 25 C
-25
-25
R =
Ambient temperature Ta ( C)
Ambient temperature Ta ( C)
Forward current I (mA)
o
0
1
0
25
2
25
50
5
100k
50
10
F
75
I = 10mA
V = 10V
F
20
o
75
o
100 125
50
100
100