ILQ621 Vishay, ILQ621 Datasheet - Page 2

• Manufacturer Part Number: ILQ621
• Description: OPTOCPLR PHOTOTRAN 4CH 50% 16DIP
• Manufacturer: Vishay

Specifications of ILQ621

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 4
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 50% @ 5mA
• Current Transfer Ratio (max): 600% @ 5mA
• Voltage - Output: 70V
• Current - Output / Channel: 50mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 16-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor
• Configuration: 4
• Maximum Collector Emitter Voltage: 70 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Current Transfer Ratio: 600 %
• Maximum Forward Diode Voltage: 1.3 V
• Minimum Forward Diode Voltage: 1 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 500 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 4
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 70V
• Opto Case Style: DIP
• No. Of Pins: 16
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1333-5; ILQ621GI; ILQ621GI

ILD621/ILD621GB/ILQ621/ILQ621GB
Vishay Semiconductors
Note
For additional information on the available options refer to option information.
Notes
(1)
(2)
www.vishay.com
2
ORDER INFORMATION
PART
ILD621-X007
ILD621-X009
ILD621GB-X007
ILQ621-X006
ILQ621-X007
ILQ621-X009
ILQ621GB-X006
ILQ621GB-X007
ILQ621GB-X009
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Reverse voltage
Forward current
Surge current
Power dissipation
Derate from 25 °C
OUTPUT
Collector emitter reverse voltage
Collector current
Power dissipation
Derate from 25 °C
COUPLER
Isolation test voltage
Package dissipation
Derate from 25 °C
Package dissipation
Derate from 25 °C
Creepage distance
Clearance distance
Isolation resistance
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
amb
= 25 °C, unless otherwise specified.
(2)
For technical questions, contact: [e-mail]
Optocoupler, Phototransistor Output
V
V
2.0 mm from case bottom
IO
(1)
IO
TEST CONDITION
= 500 V, T
= 500 V, T
t < 1.0 ms
(Dual, Quad Channel)
t = 1.0 s
amb
amb
= 100 °C
= 25 °C
CTR > 100 %, quad, SMD-16 (option 7)
CTR > 100 %, quad, SMD-16 (option 9)
CTR > 50 %, quad, SMD-16 (option 7)
CTR > 50 %, quad, SMD-16 (option 9)
CTR > 100 %, dual, SMD-8 (option 7)
CTR > 50 %, dual, SMD-8 (option 7)
CTR > 50 %, dual, SMD-8 (option 9)
CTR > 100 %, quad, DIP-16 400 mil
CTR > 50 %, quad, DIP-16 400 mil
ILD621GB
ILQ621GB
ILQ621
ILD621
PART
REMARKS
SYMBOL
V
T
P
P
V
I
R
R
T
T
V
FSM
ECO
I
I
I
amb
T
diss
diss
ISO
stg
sld
F
C
C
IO
IO
R
j
- 55 to + 150
- 55 to + 100
VALUE
≥ 10
≥ 10
5300
≥ 7.0
≥ 7.0
Document Number: 83654
1.33
- 2.0
5.33
6.67
100
100
150
400
400
500
500
100
260
6.0
1.5
70
50
60
12
11
Rev. 1.5, 20-Dec-07
mW/°C
mW/°C
mW/°C
mW/°C
UNIT
V
mW
mW
mW
mW
mW
mW
mm
mm
mA
mA
mA
°C
°C
°C
°C
RMS
Ω
Ω
V
A
V