ILD252 Vishay, ILD252 Datasheet - Page 2

• Manufacturer Part Number: ILD252
• Description: OPTOCOUPLER PHOTOTRANS 100% 8DIP
• Manufacturer: Vishay

Specifications of ILD252

• Mounting Type: Through Hole
• Isolation Voltage: 5300 Vrms
• Number Of Channels: 2
• Input Type: AC, DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 100% @ 10mA
• Voltage - Output: 30V
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor
• Package / Case: 8-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Output Device: Phototransistor
• Configuration: 2 Channel
• Maximum Collector Emitter Voltage: 30 V
• Maximum Collector Emitter Saturation Voltage: 0.4 V
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Power Dissipation: 400 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 2
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 30V
• Opto Case Style: DIP
• No. Of Pins: 8
• Number Of Elements: 2
• Forward Voltage: 1.5V
• Collector-emitter Voltage: 30V
• Package Type: PDIP
• Power Dissipation: 400mW
• Collector-emitter Saturation Voltage: 0.4V
• Pin Count: 8
• Mounting: Through Hole
• Operating Temp Range: -55C to 100C
• Operating Temperature Classification: Industrial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Compliant
• Other names: 751-1316-5; ILD252GI; ILD252GI

IL250, IL251, IL252, ILD250, ILD251, ILD252
Vishay Semiconductors
Note
T
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied
at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for
extended periods of the time can adversely affect reliability.
Note
T
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
www.vishay.com
336
amb
amb
ABSOLUTE MAXIMUM RATINGS
PARAMETER
INPUT
Forward continuous current
Power dissipation
Derate linearly from 25 °C
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
Power dissipation single channel
Power dissipation dual channel
Derate linearly from 25 °C single channel
Derate linearly from 25 °C dual channel
COUPLER
Isolation test voltage
between emitter and detector
Creepage distance
Clearance distance
Isolation resistance
Total dissipation single channel
Total dissipation dual channel
Derate linearly from 25 °C single channel
Derate linearly from 25 °C dual channel
Storage temperature
Operating temperature
Lead soldering time at 260 °C
ELECTRICAL CHARACTERISTICS
PARAMETER
INPUT
Forward voltage
OUTPUT
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector base breakdown voltage
Collector emitter leakage current
COUPLER
Collector emitter saturation voltage
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
For technical questions, contact: [e-mail]
Optocoupler, Phototransistor
I
F
TEST CONDITION
= ± 16 mA, I
with Base Connection
I
F
I
V
Output, AC Input,
I
E
I
C
C
= ± 10 mA
CE
V
= 100 µA
V
= 10 µA
IO
= 1 mA
IO
= 10 V
= 500 V, T
TEST CONDITION
= 500 V, T
C
= 2 mA
amb
amb
= 100 °C
= 25 °C
PART
SYMBOL
SYMBOL
BV
BV
BV
BV
BV
BV
V
P
P
P
V
T
R
R
P
P
T
I
CEO
CEsat
amb
V
I
diss
diss
diss
ISO
stg
F
CEO
EBO
CBO
tot
tot
IO
IO
CEO
CBO
EBO
F
MIN.
30
70
7
- 55 to + 150
- 55 to + 100
VALUE
5300
1.33
10
10
100
200
150
250
400
2.6
≥ 7
≥ 7
3.3
5.3
60
30
70
10
5
2
12
11
TYP.
Document Number: 83618
1.2
50
10
90
5
Rev. 1.5, 10-Dec-08
MAX.
1.5
0.4
50
mW/°C
mW/°C
mW/°C
mW/°C
mW/°C
UNIT
V
mW
mW
mW
mW
mW
mm
mm
mA
°C
°C
RMS
V
V
V
Ω
Ω
s
UNIT
nA
V
V
V
V
V