SI3861BDV-T1-E3 Vishay, SI3861BDV-T1-E3 Datasheet

SI3861BDV-T1-E3

Manufacturer Part Number

SI3861BDV-T1-E3

Description

IC LOAD SWITCH LVL SHIFT 6-TSOP

Manufacturer

Vishay

Type

High Side Switchr

Datasheet

1.SI3861BDV-T1-E3.pdf (6 pages)

Specifications of SI3861BDV-T1-E3

Number Of Outputs

Rds (on)

75 mOhm

Internal Switch(s)

Yes

Current Limit

2.3A

Voltage - Input

4.5 ~ 20 V

Operating Temperature

-55°C ~ 150°C

Mounting Type

Surface Mount

Package / Case

6-TSOP

On Resistance (max)

0.115 Ohm

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Maximum Power Dissipation

830 mW

Mounting Style

SMD/SMT

Switch Configuration

Dual

Transistor Polarity

N And P Channel

Continuous Drain Current Id

2.3A

Drain Source Voltage Vds

20V

On Resistance Rds(on)

145mohm

Rds(on) Test Voltage Vgs

10V

Power Dissipation Pd

830mW

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

SI3861BDV-T1-E3TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

SI3861BDV-T1-E3

Manufacturer:

VISHAY

Quantity:

814

Current page: 1 of 6
Download datasheet (108Kb)

Document Number: 73343

S09-2110-Rev. B, 12-Oct-09

Note:

* Minimum R1 value should be at least 10 x R2 to ensure Q1 turn-on.

DESCRIPTION

The Si3861BDV includes a P- and N-Channel MOSFET in a

single TSOP-6 package. The low on-resistance P-Channel

TrenchFET

N-Channel, with an external resistor, can be used as a level-

APPLICATION CIRCUITS

ON/OFF

PRODUCT SUMMARY

COMPONENTS

4.5 to 20

DS2

Optional Slew-Rate Control

(V)

Pull-Up Resistor

is tailored for use as a load switch. The

0.120 at V

0.145 at V

0.075 at V

Si3861BDV

DS(on)

(Ω)

= 5.0 V

= 4.5 V

= 10 V

Load Switch with Level-Shift

2, 3

Typical 10 kΩ to 1 mΩ*

Typical 0 to 100 kΩ*

Typical 1000 pF

± 1.9

± 1.7

± 2.3

(A)

GND

LOAD

OUT

FEATURES

The Si3861BDV is ideally suited for high-side load switching

in portable applications. The integrated N-Channel level-shift

device saves space by reducing external components. The

slew rate is set externally so that rise-times can be tailored to

different load types.

shift to drive the P-Channel load-switch. The N-Channel

MOSFET has internal ESD protection and can be driven by

logic signals as low as 1.5 V. The Si3861DV operates on

supply lines from 4.5 to 20 V, and can drive loads up to 2.3 A.

• Halogen-free According to IEC 61249-2-21

• 4.5 V Rated

• ESD Protected: 3000 V

• 105 mΩ Low R

• 4.5 V to 20 V Input

• 1.5 V to 8 V Logic Level Control

• Low Profile, Small Footprint TSOP-6 Package

• 3000 V ESD Protection On Input Switch, V

• Adjustable Slew-Rate

• Compliant to RoHS Directive 2002/95/EC

Definition

Note: For R2 switching variations with other V

DS(on)

combinations See Typical Characteristics

d(off)

d(on)

TrenchFET

R2 (kΩ)

Vishay Siliconix

Si3861BDV

ON/OFF

= 1 A

= 10 µF

= 1 µF

www.vishay.com

ON/OFF

= 3 V

/R1

Related parts for SI3861BDV-T1-E3

SI3861BDV-T1-E3 Summary of contents

Page 1

... 0.120 5 0.145 4 DESCRIPTION The Si3861BDV includes a P- and N-Channel MOSFET in a single TSOP-6 package. The low on-resistance P-Channel ® TrenchFET is tailored for use as a load switch. The N-Channel, with an external resistor, can be used as a level- APPLICATION CIRCUITS Si3861BDV ...

Page 2

... Si3861BDV Vishay Siliconix FUNCTIONAL BLOCK DIAGRAM TSOP-6 Top View Ordering Information: Si3861BDV-T1-E3 (Lead (Pb)-free) Si3861BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Input Voltage ON/OFF Voltage Load Current a Continuous Intrinsic Diode Conduction a Maximum Power Dissipation Operating Junction and Storage Temperature Range ESD Rating, MIL-STD-883D Human Body Model (100 pF, 1500 Ω ...

Page 3

... C J 0.3 0.2 0.1 0 2.0 1.8 1.6 1.4 1.2 1.0 0 °C J 0.6 0.4 0 2.0 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0.0 100 125 150 Si3861BDV Vishay Siliconix ON/OFF T = 125 ° ° ( vs DROP 1 ON/OFF T = 125 ° ( ...

Page 4

... Si3861BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1.8 1 1.4 1.2 1.0 0 ON/OFF 0.2 0.0 - 100 - Junction Temperature ( C) J Normalized On-Resistance vs. Junction Temperature d(off d(on (kΩ) Switching Variation kΩ IN 250 t d(off) 200 ON/OFF µF i 150 µF o 100 (kΩ) ...

Page 5

... ON/OFF µ µ d(on (kΩ) Switching Variation 4 300 kΩ Square Wave Pulse Dureation (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Si3861BDV Vishay Siliconix t f 100 120 Notes Duty Cycle Per Unit Base = R = 150 C/W thJA ( thJA 4. Surface Mounted 1 0 100 www.vishay.com ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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