L6206D STMicroelectronics, L6206D Datasheet - Page 14

IC DRVR FULL BRIDGE DUAL 24SOIC

L6206D

Manufacturer Part Number
L6206D
Description
IC DRVR FULL BRIDGE DUAL 24SOIC
Manufacturer
STMicroelectronics
Type
H Bridger
Datasheet

Specifications of L6206D

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
300 mOhm
Current - Output / Channel
2.8A
Current - Peak Output
5.6A
Voltage - Supply
8 V ~ 52 V
Operating Temperature
-25°C ~ 125°C
Mounting Type
Surface Mount
Package / Case
24-SOIC (7.5mm Width)
Operating Supply Voltage
8 V to 52 V
Supply Current
0.01 A
Mounting Style
SMD/SMT
Motor Type
Full Bridge
No. Of Outputs
4
Output Current
2.8A
Supply Voltage Range
8V To 52V
Driver Case Style
SO
No. Of Pins
24
Operating Temperature Range
-40°C To +150°C
Svhc
No SVHC
Rohs Compliant
Yes
For Use With
497-4135 - EVAL BOARD FOR L6206 SERIES
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3999-5
497-4210-5
497-4210-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
L6206D
Manufacturer:
ST
0
Part Number:
L6206D
Manufacturer:
ST
Quantity:
20 000
Part Number:
L6206D013TR
Manufacturer:
ST
0
L6206
PARALLELED OPERATION
The outputs of the L6206 can be paralleled to increase the output current capability or reduce the power dissi-
pation in the device at a given current level. It must be noted, however, that the internal wire bond connections
from the die to the power or sense pins of the package must carry current in both of the associated half bridges.
When the two halves of one full bridge (for example OUT1
current rating is not increased since the total current must still flow through one bond wire on the power supply
or sense pin. In addition the over current detection senses the sum of the current in the upper devices of each
bridge (A or B) so connecting the two halves of one bridge in parallel does not increase the over current detec-
tion threshold.
For most applications the recommended configuration is Half Bridge 1 of Bridge A paralleled with the Half Bridge
1 of the Bridge B, and the same for the Half Bridges 2 as shown in Figure 13. The current in the two devices
connected in parallel will share very well since the R
When connected in this configuration the over current detection circuit, which senses the current in each bridge
(A and B), will sense the current in upper devices connected in parallel independently and the sense circuit with
the lowest threshold will trip first. With the enables connected in parallel, the first detection of an over current in
either upper DMOS device will turn of both bridges. Assuming that the two DMOS devices share the current
equally, the resulting over current detection threshold will be twice the minimum threshold set by the resistors
R
In this configuration the resulting Bridge has the following characteristics.
- Equivalent Device: FULL BRIDGE
- R
- 5.6A max RMS Load Current
- 11.2A max OCD Threshold
Figure 13. Parallel connection for higher current
14/23
CLA
8-52V
DS(ON)
VS
+
or R
GROUND
-
POWER
DC
GROUND
SIGNAL
CLB
0.15
LOAD
C
1
in figure 13. It is recommended to use R
Typ. Value @ T
C
2
C
BOOT
J
D
= 25°C
1
D
2
R
P
SENSE
SENSE
VBOOT
C
OUT1
OUT2
OUT1
OUT2
P
GND
GND
GND
GND
VCP
VS
VS
A
B
A
B
A
A
B
B
DS(ON)
20
17
22
15
3
10
5
21
8
16
18
19
6
7
CLA
= R
of the devices on the same die is well matched.
A
and OUT2
CLB
.
A
) are connected in parallel, the peak
D02IN1364
14
23
11
12
24
13
9
4
1
2
OCD
EN
OCD
EN
IN1
IN2
IN1
IN2
PROGCL
PROGCL
B
A
A
A
B
B
B
A
A
B
R
R
C
CLA
CLB
EN
R
EN
EN
IN1
IN2

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