VND810MSP-E STMicroelectronics, VND810MSP-E Datasheet
VND810MSP-E
Specifications of VND810MSP-E
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VND810MSP-E Summary of contents
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... REVERSE BATTERY PROTECTION (**) ■ IN COMPLIANCE WITH THE 2002/95/EC ■ EUROPEAN DIRECTIVE DESCRIPTION The VND810MSP monolithic device designed in STMicroelectronics VIPower M0-3 Technology, intended for driving any kind of load with one side connected to ground. Active V pin voltage clamp protects the device CC against low energy spikes (see ISO7637 transient compatibility table) ...
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... VND810MSP-E Figure 2. Block Diagram V cc CLAMP GND INPUT1 STATUS1 LOGIC OVERTEMP. 1 INPUT2 STATUS2 OVERTEMP. 2 Table 3. Absolute Maximum Ratings Symbol V DC Supply Voltage Reverse DC Supply Voltage Reverse Ground Pin Current GND I DC Output Current OUT - I Reverse DC Output Current OUT I DC Input Current ...
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... INPUT 1 I STAT1 STATUS 1 I IN2 OUTPUT 1 INPUT 2 I STAT2 STATUS 2 OUTPUT 2 GND V STAT2 I GND Parameter (at least 35 m thick). Horizontal mounting and no artificial (at least 35 m thick). Horizontal mounting and no artificial VND810MSP-E OUTPUT 1 OUTPUT 1 N.C. OUTPUT 2 OUTPUT 2 Input (*) OUT1 V OUT1 I OUT2 V OUT2 ...
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... VND810MSP-E ELECTRICAL CHARACTERISTICS (8V<V <36V; -40°C<T <150°C; unless otherwise specified (Per each channel) Table 5. Power Outputs Symbol Parameter V (**) Operating Supply Voltage CC V (**) Undervoltage Shut-down USD V (**) Overvoltage Shut-down State Resistance ON I (**) Supply Current S I Off State Output Current L(off1) I Off State Output Current ...
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... V =10.4V OUT R =13 from V =11. OUT V =1.3V OUT Test Conditions V = =0A OUT V =0V IN Test Conditions V = 1.25V 3.25V 1mA -1mA IN VND810MSP-E Min Typ Max Unit 0 100 -0.7 V Min Typ Max Unit See relative V/ s diagram See relative V/ s diagram Min Typ ...
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... VND810MSP-E Figure 5. OPEN LOAD STATUS TIMING (with external pull-up) V OUT V INn V STAT n t DOL(off) Table 12. Truth Table CONDITIONS Normal Operation Current Limitation Overtemperature Undervoltage Overvoltage Output Voltage > Output Current < 6/20 I < I > V OUT INn V STAT n t DOL(on) INPUT OUTPUT OVER TEMP STATUS TIMING T > ...
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... Pin CC TEST LEVELS II III -50 V -75 V +50 V +75 V -50 V -100 V + +46.5 V +66.5 V TEST LEVELS RESULTS II III CONTENTS VND810MSP-E dV /dt OUT (off Delays and Impedance -100 +100 V 0 -150 V 0 +100 V 0 100 ms, 0.01 +86.5 V 400 ms 7/20 ...
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... VND810MSP-E Figure 7. Waveforms INPUT n OUTPUT VOLTAGE n STATUS INPUT n OUTPUT VOLTAGE n STATUS INPUT n OUTPUT VOLTAGE n STATUS n INPUT n OUTPUT VOLTAGE n STATUS n INPUT n OUTPUT VOLTAGE n STATUS INPUT n OUTPUT CURRENT STATUS n 8/20 NORMAL OPERATION UNDERVOLTAGE V USDhyst V USD undefined OVERVOLTAGE V >V V < OPEN LOAD with external pull-up V > ...
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... C and the current required by the . GND HSD I/Os (Input levels compatibility) with the latch-up limit of C I/Os. -V CCpeak Calculation example: For V CCpeak 5k R prot VND810MSP OUTPUT1 OUTPUT2 D GND max DC rating. CC line that are greater than the ones CC ...
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... VND810MSP-E Recommended R value is 10k prot OPEN LOAD DETECTION IN OFF STATE Off state open load detection requires an external pull-up resistor (R ) connected between OUTPUT pin and a PU positive supply voltage (V ) like the +5V line used to PU supply the microprocessor. The external resistor has to be selected according to the ...
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... Figure 15. Status Clamp Voltage Vscl (V) 8 7.8 7.6 7.4 7.2 7 6.8 6.6 6.4 6.2 6 125 150 175 -50 -25 VND810MSP-E Vin=3.25V 100 125 150 175 Tc (°C) Vstat= 100 125 150 175 Tc (°C) Istat=1mA 100 125 ...
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... VND810MSP-E Figure 16. On State Resistance Vs T Ron (mOhm) 400 350 Iout=1A 300 Vcc=8V; 13V & 36V 250 200 150 100 50 0 -50 - 100 Tc (ºC) Figure 17. Openload On State Detection Threshold Iol (mA Vcc=13V 50 Vin= -50 - 100 Tc (°C) Figure 18. Input High Level Vih (V) 3.6 3.4 3 ...
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... Figure 26. Turn-off Voltage Slope dVout/dt(off) (V/ms) 500 450 400 350 300 250 200 150 100 50 0 100 125 150 175 -50 125 150 175 VND810MSP-E - 100 125 150 Tc (°C) Vcc=13V Rl=13Ohm - 100 125 150 Tc (ºC) 175 175 13/20 ...
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... VND810MSP-E Figure 27. Maximum Turn Off Current Versus Load Inductance I LMAX ( 0 Single Pulse at T =150ºC Jstart B= Repetitive pulse at T =100ºC Jstart C= Repetitive Pulse at T =125ºC Jstart Conditions: V =13. Demagnetization 14/ 100 L(mH) Values are generated with R In case of repetitive pulses, T ...
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... Figure 28. PowerSO-10™ PC Board Layout condition of R and thickness=35 m, Copper areas: from minimum pad lay-out to 8cm Figure 29 PCB Copper Area in Open Box Free Air Condition thj-amb RTHj_amb (°C/ measurements (PCB FR4 area= 58mm x 58mm, PCB thickness=2mm PCB Cu heatsink area (cm^2) VND810MSP Tj-Tamb=50° 15/20 ...
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... VND810MSP-E Figure 30. PowerSO-10 Thermal Impedance Junction Ambient Single Pulse ZTH (°C/W) 1000 100 10 1 0.1 0.01 0.0001 0.001 0.01 Figure 31. Thermal Fitting Model of a Double Channel HSD in PowerSO-10 Tj_1 Pd1 C1 C2 Tj_2 R1 R2 Pd2 T_amb 16/20 0 Time (s) Pulse Calculation Formula where Table 14 ...
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... B 0. SEATING PLANE B DETAIL "A" SEATING PLANE L DETAIL "A" VND810MSP-E Max. 3.65 3.6 0.10 0.60 0.53 0.55 0.32 9.60 7.60 9.50 7.60 7.50 6.10 6.30 1.35 1.40 14.40 14.35 1.80 1.10 8º 8º ...
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... VND810MSP-E Figure 33. Suggested Pad Layout and Tube ShipmenT (no suffix) PowerSO-10™ 14.6 - 14.9 10 6.30 0. 0. Figure 34. TApe and Reel Shipment (suffix “TR”) TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 481 rev. A, Feb. 1986 Tape width W Tape Hole Spacing P0 (± ...
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... REVISION HISTORY Date Revision Oct. 2004 1 - First Issue. Mar. 2005 2 - Power Outputs table correction. Description of Changes VND810MSP-E 19/20 ...
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... VND810MSP-E Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice ...