VN06SP-E STMicroelectronics, VN06SP-E Datasheet - Page 13

• Manufacturer Part Number: VN06SP-E
• Description: IC SSR HI SIDE SMART 60V PWRSO10
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN06SP-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 180 mOhm
• Current - Output / Channel: 1.9A
• Current - Peak Output: 9A
• Voltage - Supply: 5.5 V ~ 26 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: PowerSO-10 Exposed Bottom Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

VN06
3.1
3.2
3.3
Functional description
The device has a diagnostic output which indicates open load conditions in off state as well
as in on state, output shorted to V
diagnostic and output voltage level in normal operation and in fault conditions. The output
signals are processed by internal logic. The open load diagnostic output has a 5 ms filtering.
The filter gives a continuous signal for the fault condition after an initial delay of about 5 ms.
This means that a disconnection during normal operation, with a duration of less than 5 ms
does not affect the status output. Equally, any re-connection of less than 5 ms during a
disconnection duration does not affect the status output. No delay occur for the status to go
low in case of overtemperature conditions. From the falling edge of the input signal the
status output initially low in fault condition (over temperature or open load) will go back with
a delay (tpovl)in case of overtemperature condition and a delay (tpol) in case of open load.
These feature fully comply with International Standard Office (I.S.O.) requirement for
automotive High Side Driver. To protect the device against short circuit and over current
conditions, the thermal protection turns the integrated Power MOS off at a minimum junction
temperature of 140 oC. When the temperature returns to 125 oC the switch is automatically
turned on again. In short circuit the protection reacts with virtually no delay, the sensor being
located in the region of the die where the heat is generated. Driving inductive loads, an
internal function of the device ensures the fast demagnetization with a typical voltage
(Vdemag) of -18V. This function allows to greatly reduce the power dissipation according to
the formula:
switching frequency and Vdemag = demagnetization voltage Based on this formula it is
possible to know the value of inductance and/or current to avoid a thermal shutdown. The
maximum inductance which causes the chip temperature to reach the shutdown
temperature in a specific thermal environment, is infact a function of the load current for a
fixed VCC, Vdemag and f.
Protecting the device agaist load dump - test pulse 5
The device is able to withstand the test pulse No. 5 at level II (Vs = 46.5V) according to the
ISO T/R 7637/1 without any external component. This means that all functions of the device
are performed as designed after exposure to disturbance at level II. The VN03 is able to
withstand the test pulse No.5 at level III adding an external resistor of 150 ohm between pin
1 and ground plus a filter capacitor of 1000 µF between pin 3 and ground (if R
Protecting the device against reverse battery
The simplest way to protect the device against a continuous reverse battery voltage (-26V)
is to insert a schottky diode between pin 1 (GND) and ground, as shown in the typical
application circuit
as follows:
●
●
If there is no need for the control unit to handle external analog signals referred to the power
GND, the best approach is to connect the reference potential of the control unit to node [1]
(see
avoiding shift of Vih, Vil and Vstat. This solution allows the use of a standard diode.
If the input is pulled to power GND, a negative voltage of -V
V
The undervoltage shutdown level is increased by V
Figure
IH
thresholds and V
10.), which becomes the common signal GND for the whole control board
Pdem = 0.5 ² Lload ² (Iload)2 ² [(VCC+Vdemag)/Vdemag] ² f where f =
(Figure
STAT
9.). The consequences of the voltage drop across this diode are
are increased by V
CC
and overtemperature. The truth table shows input,
F
with respect to power GND).
F
.
F
is seen by the device. (V
Application information
LOAD
≤ 20 Ω).
13/17
IL
,