TC426MJA Microchip Technology, TC426MJA Datasheet - Page 3

IC MOSFET DVR 1.5A DUAL HS 8CDIP

TC426MJA

Manufacturer Part Number
TC426MJA
Description
IC MOSFET DVR 1.5A DUAL HS 8CDIP
Manufacturer
Microchip Technology
Type
Microcontrollerr
Datasheet

Specifications of TC426MJA

Configuration
Low-Side
Input Type
Inverting
Delay Time
50ns
Current - Peak
1.5A
Number Of Configurations
2
Number Of Outputs
2
Voltage - Supply
4.5 V ~ 18 V
Operating Temperature
-55°C ~ 125°C
Mounting Type
Through Hole
Package / Case
8-CDIP (0.300", 7.62mm)
Device Type
Low Side
Module Configuration
Low Side
Peak Output Current
1.5A
Output Resistance
10ohm
Input Delay
50ns
Output Delay
75ns
Supply Voltage Range
4.5V To 18V
Driver Case Style
DIP
Rise Time
30 ns
Fall Time
30 ns
Supply Voltage (min)
4.5 V
Supply Current
8 mA
Maximum Power Dissipation
800 mW
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Number Of Drivers
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
High Side Voltage - Max (bootstrap)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
TC426MJAR
TC426MJAR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC426MJA
Manufacturer:
TI
Quantity:
1 450
Part Number:
TC426MJA
Quantity:
5 510
Part Number:
TC426MJA/883
Manufacturer:
MICROCHIP
Quantity:
670
1.0
Absolute Maximum Ratings*
Supply Voltage ..................................................... +20V
Input Voltage, Any Terminal
Power Dissipation (T
Derating Factor
Operating Temperature Range
Storage Temperature Range.............. -65°C to +150°C
TC426/TC427/TC428 ELECTRICAL SPECIFICATIONS
© 2006 Microchip Technology Inc.
Electrical Characteristics: T
Input
V
V
I
Output
V
V
R
R
I
Switching Time (Note 1)
t
t
t
t
Power Supply
I
Note
IN
PK
R
F
D1
D2
S
IH
IL
OH
OL
OH
OL
Symbol
PDIP........................................................ 730 mW
CERDIP .................................................. 800 mW
SOIC ....................................................... 470 mW
PDIP....................................................... 8 mW/°C
CERDIP .............................................. 6.4 mW/°C
SOIC ...................................................... 4 mW/°C
C Version ........................................ 0°C to +70°C
I Version ....................................... -25°C to +85°C
E Version...................................... -40°C to +85°C
M Version ................................... -55°C to +125°C
................................... V
1:
ELECTRICAL
CHARACTERISTICS
Switching times ensured by design.
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
High Output Resistance
Low Output Resistance
Peak Output Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
A
Parameter
≤ 70°C)
A
= +25°C with 4.5V ≤ V
DD
+ 0.3V to GND – 0.3V
V
DD
Min
DD
2.4
– 0.025
-1
≤ 18V, unless otherwise noted.
Typ
1.5
10
6
*Stresses
Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only and functional
operation of the device at these or any other conditions
above those indicated in the operation sections of the
specifications is not implied. Exposure to Absolute
Maximum Rating conditions for extended periods may
affect device reliability.
TC426/TC427/TC428
0.025
Max
0.8
0.4
15
10
30
30
50
75
1
8
above
Units
nsec
nsec
nsec
nsec
mA
μA
Ω
Ω
V
V
V
V
A
those
0V ≤ V
I
I
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
Figure 3-1, Figure 3-2
V
V
OUT
OUT
IN
IN
listed
= 3V (Both Inputs)
= 0V (Both Inputs)
= 10 mA, V
= 10 mA, V
IN
Test Conditions
≤ V
DD
under
DS21415C-page 3
DD
DD
= 18V
= 18V
“Absolute

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