R1LP0408CSB-5SC#S0 Renesas Electronics America, R1LP0408CSB-5SC#S0 Datasheet - Page 3

• Manufacturer Part Number: R1LP0408CSB-5SC#S0
• Description: IC SRAM 4MBIT 55NS 32TSOP
• Manufacturer: Renesas Electronics America

Specifications of R1LP0408CSB-5SC#S0

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 4M (512K x 8)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -20°C ~ 70°C
• Package / Case: 32-TSOP II
• Density: 4Mb
• Access Time (max): 55ns
• Sync/async: Asynchronous
• Architecture: Not Required
• Clock Freq (max): Not RequiredMHz
• Operating Supply Voltage (typ): 5V
• Address Bus: 19b
• Package Type: TSOP-II
• Operating Temp Range: -20C to 70C
• Number Of Ports: 1
• Supply Current: 3mA
• Operating Supply Voltage (min): 4.5V
• Operating Supply Voltage (max): 5.5V
• Operating Temperature Classification: Commercial
• Mounting: Surface Mount
• Pin Count: 32
• Word Size: 8b
• Number Of Words: 512K
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: R1LP0408CSB5SC#S0

R1LP0408C-C Series
4M SRAM (512-kword × 8-bit)
Description
The R1LP0408C-C is a 4-Mbit static RAM organized 512-kword × 8-bit. R1LP0408C-C Series has
realized higher density, higher performance and low power consumption by employing CMOS process
technology (6-transistor memory cell). The R1LP0408C-C Series offers low power standby power
dissipation; therefore, it is suitable for battery backup systems. It has packaged in 32-pin SOP, 32-pin
TSOP II.
Features
• Single 5 V supply: 5 V ± 10%
• Access time: 55/70 ns (max)
• Power dissipation:
• Completely static memory.
• Equal access and cycle times
• Common data input and output.
• Directly TTL compatible.
• Battery backup operation.
• Operating temperature: −20 to +70°C
Rev.2.00, May.26.2004, page 1 of 12
 Active: 10 mW/MHz (typ)
 Standby: 4 µW (typ)
 No clock or timing strobe required
 Three state output
 All inputs and outputs
REJ03C0077-0200Z
May.26.2004
Rev. 2.00