CY14B104N-ZS20XCT Cypress Semiconductor Corp, CY14B104N-ZS20XCT Datasheet - Page 15

• Manufacturer Part Number: CY14B104N-ZS20XCT
• Description: IC NVSRAM 4MBIT 20NS 44TSOP
• Manufacturer: Cypress Semiconductor Corp
• Type: NVSRAMr

Specifications of CY14B104N-ZS20XCT

• Format - Memory: RAM
• Memory Type: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4M (256K x 16)
• Speed: 20ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 44-TSOP II
• Word Size: 16b
• Density: 4Mb
• Interface Type: Parallel
• Operating Supply Voltage (typ): 3.3V
• Operating Temperature Classification: Commercial
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 2.7V
• Operating Temp Range: 0C to 70C
• Pin Count: 44
• Mounting: Surface Mount
• Supply Current: 65mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Truth Table For SRAM Operations
HSB should remain HIGH for SRAM Operations.
Document #: 001-07102 Rev. *L
For x8 Configuration
For x16 Configuration
CE
CE
H
L
L
L
L
L
L
L
L
L
L
H
L
L
L
WE
H
H
H
H
H
H
X
X
L
L
L
WE
H
H
X
L
OE
X
X
H
H
H
X
X
X
L
L
L
OE
H
X
X
L
BHE
X
H
H
H
H
L
L
L
L
L
L
High Z
Data Out (DQ
High Z
Data in (DQ
BLE
Inputs/Outputs
H
H
H
H
X
L
L
L
L
L
L
0
–DQ
0
High-Z
High-Z
Data Out (DQ
Data Out (DQ
DQ
Data Out (DQ
DQ
High-Z
High-Z
High-Z
Data In (DQ
Data In (DQ
DQ
Data In (DQ
DQ
–DQ
7
8
0
8
0
);
–DQ
–DQ
–DQ
–DQ
7
Inputs/Outputs
);
15
7
15
7
[2]
in High-Z
in High-Z
in High-Z
in High-Z
0
0
8
–DQ
–DQ
–DQ
0
0
8
–DQ
–DQ
–DQ
15
7
15
);
15
7
15
)
);
Deselect/Power down
Read
Output Disabled
Write
);
[2]
)
);
Deselect/Power down
Output Disabled
Read
Read
Read
Output Disabled
Output Disabled
Output Disabled
Write
Write
Write
Mode
CY14B104L, CY14B104N
Mode
Standby
Active
Active
Active
Standby
Active
Active
Active
Active
Active
Active
Active
Active
Active
Active
Power
Power
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