M25PE80-VMS6TG NUMONYX, M25PE80-VMS6TG Datasheet - Page 31

• Manufacturer Part Number: M25PE80-VMS6TG
• Description: IC SRL FLASH 8MB PG ERS 3V QFN8L
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25PE80-VMS6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25PE80-VMS6TGTR

M25PE80
6.8
Read lock register (RDLR)
The device is first selected by driving Chip Select (S) Low. The instruction code for the read
lock register (RDLR) instruction is followed by a 3-byte address (A23-A0) pointing to any
location inside the concerned sector (or subsector). Each address bit is latched-in during
the rising edge of Serial Clock (C). Then the value of the lock register is shifted out on serial
data output (Q), each bit being shifted out, at a maximum frequency f
edge of Serial Clock (C).
The instruction sequence is shown in
The read lock register (RDLR) instruction is terminated by driving Chip Select (S) High at
any time during data output.
Any read lock register (RDLR) instruction, while an erase, program or write cycle is in
progress, is rejected without having any effects on the cycle that is in progress.
Table 10.
b7-b4
Bit
b1
b0
Sector lock down
Sector write lock
Bit name
Lock registers
Value
‘1’
‘0’
‘1’
‘0’
The write lock and lock down bits cannot be changed. Once a ‘1’
is written to the lock down bit it cannot be cleared to ‘0’, except by
a reset or power-up.
The write lock and lock down bits can be changed by writing new
values to them (default value).
Write, program and erase operations in this sector will not be
executed. The memory contents will not be changed.
Write, program and erase operations in this sector are executed
and will modify the sector contents (default value).
Figure
14.
Reserved
Function
C
, during the falling
Instructions
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