CY62128BLL-70ZRXE Cypress Semiconductor Corp, CY62128BLL-70ZRXE Datasheet - Page 4

• Manufacturer Part Number: CY62128BLL-70ZRXE
• Description: IC SRAM 1MBIT 70NS 32TSOP
• Manufacturer: Cypress Semiconductor Corp

Specifications of CY62128BLL-70ZRXE

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 1M (128K x 8)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 32-TSOP I
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document #: 38-05300 Rev. *C
Data Retention Waveform
Capacitance
\
AC Test Loads and Waveforms
Data Retention Characteristics
OUTPUT
V
I
t
t
C
C
CCDR
CDR
R
Equivalent to:
Parameter
DR
IN
OUT
INCLUDING
JIG AND
SCOPE
CE
or
V
CE 2
5V
Parameter
CC
1
OUTPUT
100 pF
V
Data Retention Current
Chip Deselect to Data Retention
Time
Operation Recovery Time
CC
[6]
(a)
THÉVENIN EQUIVALENT
for Data Retention
R1 1800 Ω
639 Ω
Input Capacitance
Output Capacitance
Description
990
R2
Description
Ω
OUTPUT
V
1.77V
t
CC
INCLUDING
JIG AND
SCOPE
CDR
(Over the Operating Range for “LL” version only)
5V
, min.
5 pF
V
or CE
CC
(b)
= V
R1 1800Ω
2
T
V
DATA RETENTION MODE
≤ 0.3V, V
A
CC
DR
= 25°C, f = 1 MHz,
= 5.0V
= 2.0V, CE
V
Test Conditions
DR
IN
990 Ω
Conditions
R2
≥ V
> 2 V
CC
1
≥ V
– 0.3V or, V
GND
V
CC
CC
Rise TIme:
1 V/ns
– 0.3V,
IN
≤ 0.3V
10%
V
CC
90%
t
ALL INPUT PULSES
R
Min.
, min.
2.0
Max.
70
0
9
9
Typ.
1.5
CY62128B
Max.
MoBL
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Unit
pF
pF
90%
Fall TIme:
1 V/ns
10%
Unit
µA
ns
ns
V
