MT45W4MW16BFB-708 WT F TR Micron Technology Inc, MT45W4MW16BFB-708 WT F TR Datasheet - Page 32

• Manufacturer Part Number: MT45W4MW16BFB-708 WT F TR
• Description: IC PSRAM 64MBIT 70NS 54VFBGA
• Manufacturer: Micron Technology Inc

Specifications of MT45W4MW16BFB-708 WT F TR

• Format - Memory: RAM
• Memory Type: PSRAM (Page)
• Memory Size: 64M (4M x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C
• Package / Case: 54-VFBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 12:
Figure 24:
Figure 25:
PDF: 09005aef80be1fbd/Source: 09005aef80be2036
Burst CellularRAM_2.fm - Rev. G 10/05 EN
Description
Input Capacitance
Input/Output Capacitance (DQ)
Capacitance
AC Input/Output Reference Waveform
Output Load Circuit
Table 13:
Notes: 1. These parameters are verified in device characterization and are not 100 percent tested.
Notes: 1. AC test inputs are driven at V
Note:
Input
Output Load Circuit
2. Input timing begins at V
3. Output timing ends at V
DUT
V
V
CC
times (10% to 90%) < 1.6ns.
the input test point may not be shown to scale.
All tests are performed with the outputs configured for full drive strength (BCR[5] = 0).
SS
1
Q
Q
T
C
64Mb: 4 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory
= +25ºC; f = 1 MHz;
Conditions
V
V
1.8V
2.5V
3.0V
CC
V
CC
/2
IN
30pF
Q
2
= 0V
VccQ
R1
R2
CC
CC
Test Point
/2. Due to the possibility of a difference between V
Q/2.
32
Symbol
CC
Q for a logic 1 and V
C
C
Test Points
IO
IN
R1/R2
2.7KΩ
3.7KΩ
4.5KΩ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Min
2.0
2.5
SS
Q for a logic 0. Input rise and fall
Electrical Characteristics
V
Max
CC
6
6
Q/2
©2003 Micron Technology, Inc. All rights reserved.
3
Output
Units
pF
pF
CC
and V
Notes
1
1
CC
Q,