MT46V16M16P-5B:F TR Micron Technology Inc, MT46V16M16P-5B:F TR Datasheet - Page 2

• Manufacturer Part Number: MT46V16M16P-5B:F TR
• Description: IC DDR SDRAM 256MBIT 5NS 66TSOP
• Manufacturer: Micron Technology Inc
• Type: DDR SDRAMr

Specifications of MT46V16M16P-5B:F TR

• Format - Memory: RAM
• Memory Type: DDR SDRAM
• Memory Size: 256M (16Mx16)
• Speed: 5ns
• Interface: Parallel
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 66-TSOP
• Organization: 16Mx16
• Density: 256Mb
• Address Bus: 15b
• Access Time (max): 700ps
• Maximum Clock Rate: 400MHz
• Operating Supply Voltage (typ): 2.6V
• Package Type: TSOP
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.5V
• Supply Current: 260mA
• Pin Count: 66
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1183-2

Table 1:
Table 2:
Table 3:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
256Mb_DDR_x4x8x16_D1.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Parameter
Configuration
Refresh count
Row address
Bank address
Column address
Speed Grade
Marking
-75E/-75Z
-75E
-75Z
-5B
-75
-6T
-5B
-75
-6
6T
-6
1
Key Timing Parameters
CL = CAS (READ) latency; MIN clock rate with 50% duty cycle at CL = 2 (-75E, -75Z), CL = 2.5 (-6, -6T, -75), and
CL = 3 (-5B)
Addressing
Speed Grade Compatibility
PC3200 (3-3-3) PC2700 (2.5-3-3) PC2100 (2-2-2) PC2100 (2-3-3) PC2100 (2.5-3-3) PC1600(2-2-2)
Notes:
CL = 2
Yes
-5B
133
133
133
133
100
–
–
–
–
–
1. The -5B device is backward compatible with all slower speed grades. The voltage range of
-5B device operating at slower speed grades is V
Clock Rate (MHz)
CL = 2.5
-6/-6T
167
167
167
133
133
Yes
Yes
Yes
16 Meg x 4 x 4 banks
–
–
–
2K (A0–A9, A11)
8K (A0–A12)
4 (BA0, BA1)
64 Meg x 4
8K
CL = 3
200
n/a
n/a
n/a
n/a
-75E
Yes
Yes
Yes
Yes
–
–
2
Data-Out Window Access Window DQS–DQ Skew
8 Meg x 8 x 4 banks
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8K (A0–A12)
4 (BA0, BA1)
32 Meg x 8
1K (A0–A9)
1.6ns
2.1ns
2.0ns
2.5ns
2.5ns
-75Z
Yes
Yes
Yes
Yes
Yes
–
8K
256Mb: x4, x8, x16 DDR SDRAM
DD
= V
DD
Q = 2.5V ± 0.2V.
±0.70ns
±0.70ns
±0.70ns
±0.75ns
±0.75ns
Yes
Yes
Yes
Yes
Yes
Yes
-75
©2003 Micron Technology, Inc. All rights reserved.
4 Meg x 16 x 4 banks
16 Meg x 16
8K (A0–A12)
4 (BA0, BA1)
512 (A0–A8)
8K
+0.40ns
+0.40ns
+0.50ns
Features
+0.45ns
+0.50ns
Yes
Yes
Yes
Yes
Yes
Yes
-75