AT28LV010-20PU Atmel, AT28LV010-20PU Datasheet

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AT28LV010-20PU

Manufacturer Part Number
AT28LV010-20PU
Description
IC EEPROM 1MBIT 200NS 32DIP
Manufacturer
Atmel
Datasheet

Specifications of AT28LV010-20PU

Format - Memory
EEPROMs - Parallel
Memory Type
EEPROM
Memory Size
1M (128K x 8)
Speed
200ns
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-DIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features
1. Description
The AT28LV010 is a high-performance 3-volt only Electrically Erasable and Program-
mable Read-Only Memory. Its 1 megabit of memory is organized as 131,072 words by
8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device
offers access times to 200 ns with power dissipation of just 54 mW. When the device
is deselected, the CMOS standby current is less than 20 µA.
The AT28LV010 is accessed like a Static RAM for the read or write cycle without the
need for external components. The device contains a 128-byte page register to allow
writing of up to 128 bytes simultaneously. During a write cycle, the address and 1 to
128 bytes of data are internally latched, freeing the address and data bus for other
operations. Following the initiation of a write cycle, the device will automatically write
the latched data using an internal control timer. The end of a write cycle can be
detected by DATA polling of I/O7. Once the end of a write cycle has been detected a
new access for a read or write can begin.
Atmel’s 28LV010 has additional features to ensure high quality and manufacturability.
The device utilizes internal error correction for extended endurance and improved
data retention characteristics. Software data protection is implemented to guard
against inadvertent writes. The device also includes an extra 128 bytes of EEPROM
for device identification or tracking.
Single 3.3V ± 10% Supply
Fast Read Access Time – 200 ns
Automatic Page Write Operation
Fast Write Cycle Time
Low Power Dissipation
Hardware and Software Data Protection
DATA Polling for End of Write Detection
High Reliability CMOS Technology
JEDEC Approved Byte-Wide Pinout
Industrial and Automotive Temperature Ranges
Green (Pb/Halide-free) Packaging Option
– Internal Address and Data Latches for 128 Bytes
– Internal Control Timer
– Page Write Cycle Time – 10 ms Maximum
– 1 to 128-Byte Page Write Operation
– 15 mA Active Current
– 20 µA CMOS Standby Current
– Endurance: 10
– Data Retention: 10 Years
5
Cycles
1-Megabit
(128K x 8)
Low Voltage
Paged Parallel
EEPROMs
AT28LV010
0395D–PEEPR–10/06

Related parts for AT28LV010-20PU

AT28LV010-20PU Summary of contents

Page 1

... When the device is deselected, the CMOS standby current is less than 20 µA. The AT28LV010 is accessed like a Static RAM for the read or write cycle without the need for external components. The device contains a 128-byte page register to allow writing 128 bytes simultaneously ...

Page 2

... I/O0 13 0395D–PEEPR–10/06 2.2 32-lead PDIP Top View 2.3 32-lead TSOP Top View A11 A14 A13 A14 28 A13 VCC 25 A11 A16 23 A10 A15 22 CE A12 AT28LV010 VCC A16 A15 A12 4 29 A14 A13 A11 A10 I/O7 I/ I/O6 I/ I/O5 I/O2 ...

Page 3

... Read The AT28LV010 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in the high impedance state when either high. This dual-line control gives designers flexibility in preventing bus contention in their system ...

Page 4

... DATA Polling The AT28LV010 features DATA Polling to indicate the end of a write cycle. During a byte or page write cycle an attempted read of the last byte written will result in the complement of the written data to be presented on I/O7. Once the write cycle has been completed, true data is valid on all outputs, and the next write cycle may begin ...

Page 5

... MHz mA 3.6V OUT 1 -100 µ 3. AT28LV010 AT28LV010-25 -40°C - 85°C 3.3V ± 10 High High Z Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent dam- age to the device. This is a stress rating only and functional operation of the device at these or any ...

Page 6

... ACC specified from whichever occurs first ( This parameter is characterized and is not 100% tested. AT28LV010 6 (1)(2)(3)( after the address transition without impact on t ACC after the falling edge of CE without impact pF). L AT28LV010-20 Min Max Units 200 ns 200 ACC ...

Page 7

... Input Test Waveforms and Measurement Level 12. Output Test Load 13. Pin Capacitance ( MHz 25°C Symbol Typ OUT Note: 1. This parameter is characterized and is not 100% tested. 0395D–PEEPR–10/ < Max 6 12 AT28LV010 Units Conditions OUT 7 ...

Page 8

... Chip Select Hold Time CH t Write Pulse Width ( Data Set-up Time Data, OE Hold Time DH OEH Note: 1. All write operations must be preceded by the SDP command sequence. 15. AC Write Waveforms 15.1 WE Controlled 15.2 CE Controlled AT28LV010 8 (1) Min Max Units 0 ns 100 200 ns 100 ...

Page 9

... ADDRESS 5555 LOAD DATA 55 TO ADDRESS 2AAA LOAD DATA A0 TO ADDRESS 5555 (2) WRITES ENABLED LOAD DATA XX TO ANY ADDRESS (3) LOAD LAST BYTE TO (3) LAST ADDRESS ENTER DATA PROTECT STATE AT28LV010 Min Max 10 0 100 100 10 200 150 100 (1)(2)(3) Units µs ...

Page 10

... These parameters are characterized and not 100% tested. 2. See AC Read Characteristics 22. Toggle Bit Waveforms Notes: 1. Toggling either both OE and CE will operate toggle bit. 2. Beginning and ending state of I/O6 will vary. 3. Any address location may be used but the address should not vary. AT28LV010 10 (1) Min 10 10 (1) ...

Page 11

... Reference Section: Parallel EEPROM Die Products 0395D–PEEPR–10/06 (1) Ordering Code AT28LV010-20JI AT28LV010-20PI AT28LV010-20TI AT28LV010-25JI AT28LV010-25PI AT28LV010-25TI Ordering Code AT28LV010-20JU AT28LV010-20PU AT28LV010-20TU Package Type Package and Temperature Combinations JI, JU, PI, TI, TU, PU AT28LV010 Package Operation Range 32J Industrial 32P6 (-40° to 85° C) ...

Page 12

... Allowable protrusion is .010"(0.254 mm) per side. Dimension D1 and E1 include mold mismatch and are measured at the extreme material condition at the upper or lower parting line. 3. Lead coplanarity is 0.004" (0.102 mm) maximum. 2325 Orchard Parkway San Jose, CA 95131 R AT28LV010 12 1.14(0.045) X 45˚ PIN NO. 1 IDENTIFIER E1 E ...

Page 13

... Mold Flash or Protrusion shall not exceed 0.25 mm (0.010"). 2325 Orchard Parkway San Jose, CA 95131 R 0395D–PEEPR–10/06 D PIN 0º ~ 15º REF eB TITLE 32P6, 32-lead (0.600"/15.24 mm Wide) Plastic Dual Inline Package (PDIP) AT28LV010 E1 A1 COMMON DIMENSIONS (Unit of Measure = mm) MIN SYMBOL NOM A – – A1 0.381 – D 41.783 – ...

Page 14

... E Notes: 1. This package conforms to JEDEC reference MO-142, Variation BD. 2. Dimensions D1 and E do not include mold protrusion. Allowable protrusion 0.15 mm per side and 0.25 mm per side. 3. Lead coplanarity is 0.10 mm maximum. 2325 Orchard Parkway San Jose, CA 95131 R AT28LV010 14 PIN SEATING PLANE A1 TITLE ...

Page 15

... Disclaimer: The information in this document is provided in connection with Atmel products. No license, express or implied, by estoppel or otherwise, to any intellectual property right is granted by this document or in connection with the sale of Atmel products. EXCEPT AS SET FORTH IN ATMEL’S TERMS AND CONDI- TIONS OF SALE LOCATED ON ATMEL’S WEB SITE, ATMEL ASSUMES NO LIABILITY WHATSOEVER AND DISCLAIMS ANY EXPRESS, IMPLIED OR STATUTORY WARRANTY RELATING TO ITS PRODUCTS INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTY OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT ...

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