CY7C131-55NXC Cypress Semiconductor Corp, CY7C131-55NXC Datasheet - Page 10

• Manufacturer Part Number: CY7C131-55NXC
• Description: IC SRAM 8KBIT 55NS 52-QFP
• Manufacturer: Cypress Semiconductor Corp
• Type: Asynchronousr

Specifications of CY7C131-55NXC

• Memory Size: 8K (1K x 8)
• Package / Case: 52-QFP
• Format - Memory: RAM
• Memory Type: SRAM - Dual Port, Asynchronous
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C
• Access Time: 55 ns
• Supply Voltage (max): 5.5 V
• Supply Voltage (min): 4.5 V
• Maximum Operating Current: 110 mA
• Maximum Operating Temperature: + 70 C
• Minimum Operating Temperature: 0 C
• Mounting Style: SMD/SMT
• Number Of Ports: 2
• Operating Supply Voltage: 5 V
• Rohs Compliant: YES
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 428-2111; CY7C131-55NXC

Switching Waveforms
Document #: 38-06002 Rev. *E
Notes
ADDRESS
23. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of t
24. If the CE LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high impedance state.
ADDRESS
DATA
DATA
D
DATA
and for data to be placed on the bus for the required t
OUT
R/W
OE
CE
R/W
IN
OUT
CE
IN
Figure 9. Write Cycle No. 2 (R/W Three-States Data I/Os—Either Port)
Figure 8. Write Cycle No. 1 (OE Three-States Data I/Os—Either Port
t
HZOE
t
SA
(continued)
t
SA
SD
.
t
SCE
t
SCE
t
AW
t
AW
t
Either Port
HZWE
t
WC
t
WC
HIGH IMPEDANCE
t
PWE
DATA VALID
t
PWE
t
SD
PWE
HIGH IMPEDANCE
or t
t
DATA VALID
SD
HZWE
+ t
SD
to allow the data I/O pins to enter high impedance
t
HD
t
HD
t
LZWE
t
HA
t
HA
CY7C130, CY7C130A
CY7C131, CY7C131A
[16, 23]
[17, 24]
CY7C140, CY7C141
Page 10 of 19
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