M29W800DB45ZE6E NUMONYX, M29W800DB45ZE6E Datasheet - Page 22

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M29W800DB45ZE6E

Manufacturer Part Number
M29W800DB45ZE6E
Description
IC FLASH 8MBIT 45NS 48TFBGA
Manufacturer
NUMONYX
Series
Axcell™r
Datasheet

Specifications of M29W800DB45ZE6E

Format - Memory
FLASH
Memory Type
FLASH - Nor
Memory Size
8M (1M x 8 or 512K x 16)
Speed
45ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TFBGA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M29W800DB45ZE6E
Manufacturer:
MICRON
Quantity:
210
Part Number:
M29W800DB45ZE6E
Manufacturer:
Micron Technology Inc
Quantity:
10 000
Table 5.
1. X don’t care, PA program address, PD program data, BA any address in the block.
Table 6.
1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V
4. Maximum value measured at worst case conditions for both temperature and V
22/52
Read/Reset
Auto Select
Program
Unlock Bypass
Unlock Bypass
Program
Unlock Bypass Reset
Chip Erase
Block Erase
Erase Suspend
Erase Resume
Read CFI Query
Chip erase
Block erase (64 Kbytes)
Erase suspend latency time
Program (byte or word)
Chip program (byte by byte)
Chip program (word by word)
Program/erase cycles (per block)
Data retention
All values in the table are in hexadecimal.
The command interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-DQ14 and DQ15
are don’t care. DQ15A–1 is A–1 when BYTE is V
Command
Commands, 8-bit mode, BYTE = V
Program/erase times and program/erase endurance cycles
Parameter
6+ AAA
1
3
3
4
3
2
2
6
1
1
1
Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data
AAA
AAA
AAA
AAA
AAA
AA
X
X
X
X
X
1st
AA
AA
AA
AA
AA
AA
F0
A0
B0
90
30
98
555
555
555
555
555
555
PA
X
IL
2nd
or DQ15 when BYTE is V
PD
55
55
55
55
00
55
55
IL
(1)
AAA
AAA
AAA
AAA
AAA
X
Bus write operations
100,000
3rd
Min.
20
F0
90
A0
20
80
80
IH
.
CC
CC
AAA
AAA
PA
.
after 100,000 program/erase cycles.
4th
Typ.
0.8
10
12
15
12
PD
AA
AA
6
(1)(2)
555
555
5th
Max.
200
1.6
25
25
60
30
55
55
(3)
(3)
(3)
(4)
(4)
(3)
(2)
AAA
BA
cycles
6th
years
Unit
μs
μs
s
s
s
s
10
30

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