M25P80-VMW6TG NUMONYX, M25P80-VMW6TG Datasheet - Page 41

• Manufacturer Part Number: M25P80-VMW6TG
• Description: IC FLASH 8MBIT 75MHZ 8SOIC
• Manufacturer: NUMONYX
• Series: Forté™r

Specifications of M25P80-VMW6TG

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 8M (1M x 8)
• Speed: 75MHz
• Interface: SPI, 3-Wire Serial
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 8-SOIC (5.3mm Width), 8-SOP, 8-SOEIAJ
• Package: 8SO W
• Cell Type: NOR
• Density: 8 Mb
• Architecture: Sectored
• Block Organization: Symmetrical
• Typical Operating Supply Voltage: 3.3 V
• Sector Size: 64KByte x 16
• Timing Type: Synchronous
• Interface Type: Serial-SPI
• Access Time (max): 8ns
• Boot Type: Not Required
• Address Bus: 1b
• Operating Supply Voltage (typ): 3.3V
• Operating Temp Range: -40C to 85C
• Package Type: SOIC W
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Synchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 1M
• Supply Current: 8mA
• Mounting: Surface Mount
• Pin Count: 8
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: M25P80-VMW6TG; M25P80-VMW6TGTR

Table 15.
Symbol
t
t
t
t
t
t
t
t
t
SHQZ
HHQX
WHSL
SHWL
CLCH
CHCL
HLQZ
RES1
RES2
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
DVCH
CHDX
CHSH
SHCH
CHHH
HHCH
CH
SLCH
CHSL
SHSL
CLQV
CLQX
HLCH
CHHL
DP
CL
f
f
C
R
(2)
(2)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(3)
(5)
(5)
t
t
t
t
t
Alt.
t
t
t
CLH
CSS
DSU
CSH
t
CLL
t
DIS
f
DH
t
HO
HZ
LZ
AC characteristics (75 MHz operation)
C
V
Clock frequency for the following instructions:
FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI,
RDID, RDSR, WRSR
Clock frequency for READ instructions
Clock High time
Clock Low time
Clock Rise time
Clock Fall time
S active setup time (relative to C)
S not active hold time (relative to C)
Data In setup time
Data In hold time
S active hold time (relative to C)
S not active setup time (relative to C)
S deselect time
Output disable time
Clock Low to Output Valid under 30 pF
Clock Low to Output Valid under 10 pF
Output hold time
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD setup time (relative to C)
HOLD hold time (relative to C)
HOLD to Output Low-Z
HOLD to Output High-Z
Write Protect setup time
Write Protect hold time
S High to Deep Power-down mode
S High to Standby mode without Electronic Signature
Read
S High to Standby mode with Electronic Signature
Read
75 MHz available only for products made in 110 nm technology,
Test conditions specified in
(3)
(4)
(peak to peak)
(peak to peak)
Parameter
Table 10
and
—
—
—
—
—
—
Min.
Table 12
100
100
DC
DC
0.1
0.1
20
6
6
5
5
2
5
5
5
0
5
5
5
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
(1)
Max.
1.8
75
33
8
8
6
8
8
3
3
MHz
MHz
V/ns
V/ns
Unit
41/57
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
μs
μs
μs