IS42S32400B-6B ISSI, Integrated Silicon Solution Inc, IS42S32400B-6B Datasheet - Page 14

• Manufacturer Part Number: IS42S32400B-6B
• Description: IC SDRAM 128MBIT 166MHZ 90FBGA
• Manufacturer: ISSI, Integrated Silicon Solution Inc
• Type: SDRAMr

Specifications of IS42S32400B-6B

• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (4Mx32)
• Speed: 166MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 90-FBGA
• Organization: 4Mx32
• Density: 128Mb
• Address Bus: 14b
• Access Time (max): 6.5/5.4ns
• Maximum Clock Rate: 166MHz
• Operating Supply Voltage (typ): 3.3V
• Package Type: TFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 180mA
• Pin Count: 90
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

DC RECOMMENDED OPERATING CONDITIONS
Symbol
IS42S32400B
ABSOLUTE MAXIMUM RATINGS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
2. All voltages are referenced to Vss.
Note:
1. V
2. V
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS
14
Symbol
V
V
V
V
P
I
T
T
Symbol
C
C
CI/O
the device. This is a stress rating only and functional operation of the device at these or any other condi-
tions above those indicated in the operational sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect reliability.
CS
OPR
STG
IH
IL
OUT
DD MAX
DDQ MAX
IN
D MAX
IN1
IN2
V
V
V
(min) = -1.2V (
V
(max) = V
DDQ
IH
IL
DD
(2)
(1)
DDQ
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance:I/Os
Parameter
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
+1.2V (
PULSE WIDTH
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
Output Shorted Current
Operating Temperature
Storage Temperature
PULSE WIDTH
< 3
NS
).
< 3
NS
).
(1)
(At T
Integrated Silicon Solution, Inc. — www.issi.com —
A
= 0 to +25°C, V
Com.
Ind.
Min.
-0.3
2.0
3.0
3.0
Min.
2.5
2.5
4.0
–1.0 to V
–0.5 to V
Typ.
–0.5 to +4.6
–0.5 to +4.6
–65 to +150
3.3
3.3
—
—
–40 to +85
DD
0 to +70
Rating
= V
50
1
DDQ
DD
DDQ
+ 0.5
+ 0.5
V
= 3.3 ± 0.3V)
DDQ
Max.
+0.8
3.6
3.6
3.5
3.8
6.5
-6
+ 0.3
Max.
PRELIMINARY INFORMATION Rev. 00J
Unit
mA
°C
°C
W
V
V
V
V
Unit
4.0
5.0
6.5
V
V
V
V
-7
1-800-379-4774
Unit
pF
pF
pF
03/03/09