BC817-25LT3 ON Semiconductor, BC817-25LT3 Datasheet

no-image

BC817-25LT3

Manufacturer Part Number
BC817-25LT3
Description
Transistors Bipolar - BJT 500mA 50V NPN
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC817-25LT3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
50 V
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Collector-emitter Saturation Voltage
45 V
Maximum Dc Collector Current
0.5 A
Gain Bandwidth Product Ft
100 MHz
Dc Collector/base Gain Hfe Min
160
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-23-3
Continuous Collector Current
0.5 A
Maximum Power Dissipation
225 mW
Minimum Operating Temperature
- 55 C
Factory Pack Quantity
10000

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC817-25LT3G
Manufacturer:
ON
Quantity:
30 000
Company:
Part Number:
BC817-25LT3G
Quantity:
185 755
BC817-16L, SBC817-16L,
BC817-25L, SBC817-25L,
BC817-40L, SBC817-40L
General Purpose
Transistors
NPN Silicon
Features
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in 99.5% alumina.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 12
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
Total Device Dissipation FR− 5 Board,
(Note 1) T
Thermal Resistance,
Total Device Dissipation
Alumina Substrate, (Note 2)
Thermal Resistance,
Junction and Storage Temperature
Site and Control Change Requirements
Compliant
AEC−Q101 Qualified and PPAP Capable
S Prefix for Automotive and Other Applications Requiring Unique
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Derate above 25°C
Junction−to−Ambient
T
Derate above 25°C
Junction−to−Ambient
A
A
Characteristic
= 25°C
= 25°C
Rating
Symbol
Symbol
T
V
V
V
R
R
J
P
P
CEO
CBO
, T
EBO
I
qJA
qJA
C
D
D
stg
−55 to +150
Value
Max
500
225
556
300
417
5.0
1.8
2.4
45
50
1
mW/°C
mW/°C
mAdc
°C/W
°C/W
Unit
Unit
mW
mW
°C
V
V
V
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
(Note: Microdot may be in either location)
ORDERING INFORMATION
6x
M
G
MARKING DIAGRAM
http://onsemi.com
BASE
1
1
= Device Code
= Date Code*
= Pb−Free Package
1
x = A, B, or C
CASE 318
STYLE 6
SOT−23
6x M G
COLLECTOR
2
Publication Order Number:
G
EMITTER
3
2
3
BC817−16LT1/D

Related parts for BC817-25LT3

BC817-25LT3 Summary of contents

Page 1

... BC817-16L, SBC817-16L, BC817-25L, SBC817-25L, BC817-40L, SBC817-40L General Purpose Transistors NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS ...

Page 2

... Tape and Reel Packaging Specifications Brochure, BRD8011/ 25°C unless otherwise noted) A Symbol V (BR)CEO V (BR)CES V (BR)EBO BC817−16, SBC817−16 BC817−25, SBC817−25 BC817−40, SBC817− Specific Marking Package SOT−23 6A (Pb−Free) SOT−23 6B (Pb−Free) SOT−23 6C (Pb− ...

Page 3

... TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L 300 150°C 200 25°C −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 1. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 3. Base Emitter Saturation Voltage vs. Collector Current ...

Page 4

... TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L 1 25°C J 0.8 0 100 mA 300 mA C 0.4 0.2 0 0.01 0 BASE CURRENT (mA) B Figure 5. Saturation Region 100 500 100 1 Figure 6. Temperature Coefficients REVERSE VOLTAGE (VOLTS) R Figure 7. Capacitances http://onsemi.com 4 for V ...

Page 5

... TYPICAL CHARACTERISTICS − BC817−25L, SBC817−25L 500 150°C 400 300 25°C 200 −55°C 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 8. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 10. Base Emitter Saturation Voltage vs. Collector Current ...

Page 6

... TYPICAL CHARACTERISTICS − BC817−25L, SBC81725L 1 25°C J 0.8 0 100 mA 300 mA C 0.4 0.2 0 0.01 0 BASE CURRENT (mA) B Figure 13. Saturation Region 100 500 100 1 Figure 14. Temperature Coefficients REVERSE VOLTAGE (VOLTS) R Figure 15. Capacitances http://onsemi.com 6 for V CE(sat) ...

Page 7

... TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L 700 150°C 600 500 25°C 400 300 −55°C 200 100 0 0.001 0. COLLECTOR CURRENT (A) C Figure 16. DC Current Gain vs. Collector Current 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 18. Base Emitter Saturation Voltage vs. ...

Page 8

... TYPICAL CHARACTERISTICS − BC817−40L, SBC817−40L 1 25°C J 0.8 0 100 mA 300 mA C 0.4 0.2 0 0.01 0 BASE CURRENT (mA) B Figure 21. Saturation Region 100 500 100 1 Figure 22. Temperature Coefficients REVERSE VOLTAGE (VOLTS) R Figure 23. Capacitances http://onsemi.com 8 for V ...

Page 9

... TYPICAL CHARACTERISTICS − BC817−16L, SBC817−16L, BC817−25L, SBC817−25L, BC817−40L, 1 0.1 0.01 Single Pulse Test @ T 0.001 0.01 SBC817−40L 1 ms 100 Thermal Limit = 25° (Vdc) CE Figure 24. Safe Operating Area http://onsemi.com 9 100 ...

Page 10

... ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative BC817−16LT1/D ° ...

Related keywords