BC807-40 /T3 NXP Semiconductors, BC807-40 /T3 Datasheet - Page 5

• Manufacturer Part Number: BC807-40 /T3
• Description: Transistors Bipolar - BJT TRANS GP TAPE-13
• Manufacturer: NXP Semiconductors

Specifications of BC807-40 /T3

• Product Category: Transistors Bipolar - BJT
• Rohs: yes
• Configuration: Single
• Transistor Polarity: PNP
• Collector- Base Voltage Vcbo: 50 V
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Gain Bandwidth Product Ft: 80 MHz
• Dc Collector/base Gain Hfe Min: 250 at 100 mA at 1 V
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-23
• Maximum Power Dissipation: 250 mW
• Minimum Operating Temperature: - 65 C
• Factory Pack Quantity: 10000
• Part # Aliases: BC807-40,235

NXP Semiconductors
7. Characteristics
Table 8.
T
[1]
[2]
BC807_BC807W_BC327_6
Product data sheet
Symbol
I
I
h
h
V
V
C
f
CBO
EBO
T
amb
FE
FE
CEsat
BE
c
Pulse test: t
V
= 25
BE
decreases by approximately 2 mV/K with increasing temperature.
°
C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off current
emitter-base cut-off current
DC current gain
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
transition frequency
p
BC807; BC807W; BC327
BC807-16; BC807-16W;
BC327-16
BC807-25; BC807-25W;
BC327-25
BC807-40; BC807-40W;
BC327-40
≤ 300 μs; δ ≤ 0.02.
Rev. 06 — 17 November 2009
Conditions
I
I
T
I
I
I
I
I
I
f = 1 MHz
I
f = 100 MHz
E
E
C
C
C
C
C
E
C
j
= 0 A; V
= 0 A; V
= 150 °C
= i
= 0 A; V
= −100 mA; V
= −500 mA; V
= −500 mA; I
= −500 mA; V
= −10 mA; V
e
= 0 A; V
CB
CB
EB
= −20 V
= −20 V;
= −5 V
CB
CE
B
CE
CE
CE
= −50 mA
= −10 V;
= −5 V;
BC807; BC807W; BC327
= −1 V
= −1 V
= −1 V
45 V, 500 mA PNP general-purpose transistors
[1]
[1]
[1]
[2]
Min
-
-
-
100
100
160
250
40
-
-
-
80
Typ
-
-
-
-
-
-
-
-
-
-
5
-
© NXP B.V. 2009. All rights reserved.
Max
−100
−5
−100
600
250
400
600
-
−700
−1.2
-
-
Unit
nA
μA
nA
mV
V
pF
MHz
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