IS42S16800E-7TL-TR ISSI, Integrated Silicon Solution Inc, IS42S16800E-7TL-TR Datasheet - Page 44
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IS42S16800E-7TL-TR
Manufacturer Part Number
IS42S16800E-7TL-TR
Description
IC SDRAM 128MBIT 143MHZ 54TSOP
Manufacturer
ISSI, Integrated Silicon Solution Inc
Type
SDRAMr
Datasheet
1.IS42S81600E-7TL.pdf
(61 pages)
Specifications of IS42S16800E-7TL-TR
Format - Memory
RAM
Memory Type
SDRAM
Memory Size
128M (8Mx16)
Speed
143MHz
Interface
Parallel
Voltage - Supply
3 V ~ 3.6 V
Operating Temperature
0°C ~ 70°C
Package / Case
54-TSOP II
Organization
16Mx8
Density
128Mb
Address Bus
14b
Access Time (max)
6.5/5.4ns
Maximum Clock Rate
143MHz
Operating Supply Voltage (typ)
3.3V
Package Type
TSOP-II
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Supply Current
130mA
Pin Count
54
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
IS42S81600E, IS42S16800E
ALTERNATING BANK WRITE ACCESSES
Notes:
1) Burst Length = 4
2) x16: A9 and A11 = "Don't Care"
44
DQM/DQML
COMMAND
A0-A9, A11
x8: A11 = "Don't Care"
BA0, BA1
DQMH
CKE
CLK
A10
DQ
t
t
CKS
CMS
t
t
t
BANK 0
AS
AS
AS
ACTIVE
ROW
ROW
T0
t
CKH
t
t
t
t
AH
AH
AH
CMH
t
t
t
t
RCD
RRD
RAS
RC
t
- BANK 0
CK
- BANK 0
- BANK 0
ENABLE AUTO PRECHARGE
T1
NOP
t
t
CMS
CL
t
COLUMN m
BANK 0
DS
WRITE
D
T2
IN
t
CMH
t
t
DH
m
CH
(2)
t
DS
D
T3
NOP
IN
t
m+
DH
1
t
BANK 1
DS
ACTIVE
ROW
ROW
D
T4
IN
t
m+
DH
2
t
RCD
t
DS
D
- BANK 1
ENABLE AUTO PRECHARGE
T5
IN
NOP
Integrated Silicon Solution, Inc. — www.issi.com
t
m+
DH
t
DPL
3
- BANK 0
t
COLUMN b
DS
BANK 1
WRITE
D
T6
IN
t
DH
b
(2)
t
DS
D
t
RP
T7
NOP
IN
t
- BANK 0
b+
DH
1
t
DS
D
T8
NOP
IN
t
b+
DH
2
t
DS
ACTIVE
DON'T CARE
BANK 0
D
T9
ROW
ROW
IN
t
b+
t
t
DH
RCD
DPL
3
03/16/2011
- BANK 0
- BANK 1
Rev. D