IS63LV1024-8KI ISSI, Integrated Silicon Solution Inc, IS63LV1024-8KI Datasheet - Page 8

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IS63LV1024-8KI

Manufacturer Part Number
IS63LV1024-8KI
Description
IC SRAM 1MBIT 8NS 32SOJ
Manufacturer
ISSI, Integrated Silicon Solution Inc
Datasheet

Specifications of IS63LV1024-8KI

Format - Memory
RAM
Memory Type
SRAM - Asynchronous
Memory Size
1M (128K x 8)
Speed
8ns
Interface
Parallel
Voltage - Supply
3.15 V ~ 3.45 V
Operating Temperature
-40°C ~ 85°C
Package / Case
32-SOJ
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
AC WAVEFORMS
WRITE CYCLE NO. 2
IS63LV1024
IS63LV1024L
8
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write,
2. I/O will assume the High-Z state if OE > V
but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling
edge of the signal that terminates the Write.
ADDRESS
ADDRESS
D
D
OUT
OUT
WE
WE
D
D
OE
OE
CE
CE
IN
IN
LOW
LOW
LOW
t
SA
(1)
t
DATA UNDEFINED
DATA UNDEFINED
(WE Controlled: OE is LOW During Write Cycle)
SA
(WE Controlled,
IH
.
Integrated Silicon Solution, Inc. — www.issi.com —
= HIGH during Write Cycle)
VALID ADDRESS
t
t
t
t
AW
AW
HZWE
HZWE
VALID ADDRESS
t
t
PWE1
WC
t
t
PWE2
WC
HIGH-Z
HIGH-Z
t
t
SD
SD
DATA
DATA
IN
IN
VALID
VALID
t
t
HD
HD
t
t
LZWE
LZWE
t
t
HA
HA
1-800-379-4774
CE_WR2.eps
CE_WR3.eps
07/02/2010
Rev. O

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